Method of forming semiconductor layer
A method of forming a semiconductor layer includes cleaning a substrate having a germanium layer formed as a surface layer, with a solution containing at least one selected from the group consisting of hydrochloric acid, hydrobromic acid, and hydroiodic acid, subjecting the substrate after the cleaning to hydrogen annealing in a CVD chamber, and introducing a deposition gas into the CVD chamber to form a semiconductor layer on the substrate.
1 . A method of forming a semiconductor layer, comprising:
cleaning a substrate having a germanium layer formed as a surface layer, with a solution containing at least one selected from the group consisting of hydrochloric acid, hydrobromic acid, and hydroiodic acid;
subjecting the substrate after said cleaning to hydrogen annealing in a CVD chamber; and
introducing a deposition gas into the CVD chamber to form a semiconductor layer on the substrate.
2 . The method according to claim 1 , wherein the substrate includes a base plate, an insulating layer formed on the base plate, and the germanium layer formed on the insulating layer.
3 . The method according to claim 1 , wherein the substrate is a germanium bulk substrate.
4 . The method according to claim 1 , wherein the solution further contains hydrofluoric acid.
5 . The method according to claim 1 , wherein the hydrogen annealing is performed at 500° C. or less.
6 . The method according to claim 1 , wherein the deposition gas includes a germane gas, and the semiconductor layer includes a germanium layer.
7 . The method according to claim 1 , wherein the deposition gas includes a monosilane or disilane gas, and a germane gas, and the semiconductor layer includes a silicon germanium layer.
8 . The method according to claim 1 , wherein the deposition gas includes a monosilane or disilane gas, and the semiconductor layer includes a silicon layer.
9 . A method of forming a semiconductor layer, comprising:
cleaning a substrate having an SiGe layer formed as a surface layer, with a solution containing at least one selected from the group consisting of hydrochloric acid, hydrobromic acid, and hydroiodic acid;
subjecting the substrate after said cleaning to hydrogen annealing in a CVD chamber; and
introducing a deposition gas into the CVD chamber to form a semiconductor layer on the substrate.
10 . The method according to claim 9 , wherein the substrate includes a base plate, an insulating layer formed on the base plate, and a silicon germanium layer formed on the insulating layer.
11 . The method according to claim 9 , wherein the substrate includes a silicon substrate, and a silicon germanium layer crystal-grown on the silicon substrate.
12 . The method according to claim 9 , wherein the solution includes hydrofluoric acid.
13 . The method according to claim 9 , wherein the hydrogen annealing is performed at 850° C. or less.
14 . The method according to claim 9 , wherein the deposition gas includes a germane gas, and the semiconductor layer includes a germanium layer.
15 . The method according to claim 9 , wherein the deposition gas includes a monosilane or disilane gas, and a germane gas, and the semiconductor layer includes a silicon germanium layer.
16 . The method according to claim 9 , wherein the deposition gas includes a monosilane or disilane gas, and the semiconductor layer includes a silicon layer.
18 . A method of forming a semiconductor layer, comprising:
cleaning a substrate having a germanium layer or a silicon germanium layer formed as a surface layer, with a solution containing at least one selected from the group consisting of hydrochloric acid, hydrobromic acid, and hydroiodic acid;
subjecting the cleaned substrate to hydrogen annealing in a CVD chamber;
introducing a monosilane or disilane gas into the CVD chamber to form a silicon layer on the substrate; and
insulating the silicon layer.
19 . The method according to claim 18 , wherein said insulating the silicon layer includes forming converting the silicon layer, the silicon layer into a silicon oxide layer or a silicon oxynitride layer.
20 . The method according to claim 18 , wherein said insulating the silicon layer includes forming a dielectric layer having a dielectric constant higher than that of a silicon oxide layer on the silicon layer, and applying a heat treatment to the silicon layer and the dielectric layer to form a silicate layer.
21 . The method according to claim 18 , wherein said insulating the silicon layer includes
converting the silicon layer into a silicon oxide or silicon oxide nitride layer,
forming a dielectric layer having a dielectric constant higher than that of the silicon oxide layer on the silicon oxide or silicon oxynitride layer, and
applying a heat treatment to the silicon oxide or silicon oxynitride layer and the dielectric layer.
22 . The method according to claim 1 , wherein the solution includes hydrofluoric acid.