SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a first oxide film lying on the substrate, a thin semiconductor film lying on the first oxide film, a first terminal formed on the semiconductor film, a second terminal formed on the semiconductor film, a semiconductor element formed on the semiconductor film and electrically connected between the first and second terminals, and a protective diode formed on the semiconductor film and electrically connected in between the second and first terminal in a forward direction.
1 . A semiconductor device comprising:
a substrate;
a first oxide film lying on the substrate;
a thin semiconductor film lying on the first oxide film;
a first terminal formed on the semiconductor film;
a second terminal formed on the semiconductor film;
a semiconductor element formed on the semiconductor film and electrically connected between the first and second terminals; and
a protective diode formed on the semiconductor film and electrically connected in between the second and first terminal in a forward direction.
2 . The semiconductor device according to claim 1 , wherein
the protective diode is a lateral type diode.
3 . The semiconductor device according to claim 1 , wherein
the semiconductor element is a transistor,
the first terminal is electrically connected with a gate of the transistor, and
the second terminal is electrically connected with a source of the transistor.
4 . The semiconductor device according to claim 1 , further comprising:
a signal line formed on the semiconductor film; and
a power supply line formed on the semiconductor film,
wherein the first terminal is electrically connected with the signal line, and
the second terminal is electrically connected with the power supply line.
5 . The semiconductor device according to claim 1 , wherein
the protective diode comprises
a first doped region having a p type conductivity formed on the semiconductor film,
a second doped region having a n type conductivity formed on the semiconductor film, and
a third doped region formed between the first and second doped regions,
wherein a p or n type impurity concentration of the third doped region is lower than that of the first or second doped region.
6 . The semiconductor device according to claim 5 , further comprising:
a first silicide film formed on the first doped region;
a second silicide film formed on the second doped region; and
a second oxide film formed at least on the third doped region.
7 . The semiconductor device according to claim 1 , wherein
the second terminal is electrically connected with the substrate.
8 . The semiconductor device according to claim 7 , wherein
the substrate comprises a fourth doped region doped with p or n type impurities,
wherein the second terminal is electrically connected with the fourth doped region.
9 . The semiconductor device according to claim 5 , further comprising:
a metal layer formed over the semiconductor element,
wherein the impurity concentration of the third doped region is set based on the structure of the metal layer.