IP Library Granted Patent US 7,524,731
Granted Patent B2
US 7,524,731 · App. 11/540,614 · Granted Apr 28, 2009

Process of forming an electronic device including an inductor

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Quick Facts
Patent No.
US 7,524,731
App. No.
11/540,614
Granted
Apr 28, 2009
Kind
B2
Abstract

An electronic device can include an inductor overlying a shock-absorbing layer. In one aspect, the electronic device can include a substrate, an interconnect level overlying the substrate, and the shock-absorbing layer overlying the interconnect level. The inductor can include conductive traces and looped wires. The conductive traces can be attached to the conductive traces over the shock-absorbing layer. In another aspect, a process can be used to form the electronic device including the inductor. In still another aspect, an electronic device can a toroidal-shaped inductor that includes linear inductor segments that are connected in series.

Claims (54)

1. A process of forming an electronic device comprising:

forming an interconnect level overlying a die substrate, wherein the interconnect level comprises a first interconnect and a second interconnect;

forming a shock-absorbing layer overlying the interconnect level;

patterning the shock-absorbing layer to define a first opening that exposes the first interconnect and a second opening that exposes the second interconnect;

forming conductive traces, wherein:

the conductive traces include a first conductive trace and a second conductive trace;

a via portion of the first conductive trace extends to the first opening of the shock-absorbing layer and is electrically connected to the first interconnect, and a primary pad portion of the first conductive trace overlies the shock-absorbing layer; and

a secondary pad portion of the second conductive trace overlies the shock-absorbing layer, and a via portion of the second conductive trace extends to the second opening of the shock-absorbing layer and is electrically connected to the second interconnect; and

attaching at least one wire to the conductive traces to form an inductor, wherein:

a first wire of the at least one wire is attached to the primary pad portion of the first conductive trace; and

the first wire or a second wire of the at least one wire is attached to the secondary pad portion of the second conductive trace.

2. The process of claim 1 , wherein forming the shock-absorbing layer comprises forming an organic polymer layer.

3. The process of claim 2 , wherein forming the shock-absorbing layer comprises forming the shock-absorbing layer that includes polyimide.

4. The process of claim 2 , wherein forming the conductive traces is performed after patterning the shock-absorbing layer and comprises:

forming a seed layer over the shock-absorbing layer and within the first opening and the second opening;

forming a patterned layer over the seed layer, wherein the patterned layer comprises third openings corresponding to a pattern for the conductive traces;

forming a conductive layer over the seed layer within the third openings;

removing the patterned layer to form exposed portions of the seed layer; and

removing the exposed portions of the seed layer, wherein the conductive traces include remaining portions of the seed layer and the conductive layer.

5. The process of claim 1 , wherein:

forming the conductive traces comprises forming third conductive traces overlying the shock-absorbing layer, wherein each of the third conductive traces includes a primary pad portion and a secondary pad portion; and

attaching the at least one wire further comprises bonding third wires between the primary pad portions and the secondary pad portions of adjacent third conductive traces at areas overlying the shock-absorbing layer.

6. The process of claim 5 , wherein forming the third conductive traces comprises forming the third conductive traces, wherein for each of the third conductive traces, the secondary pad portion is octagonal, and the primary pad portion has a shape other than octagonal.

7. The process of claim 1 , wherein:

forming the interconnect level comprises forming bonding pads;

the process further comprises:

forming a passivation layer over the interconnect level and before forming the shock-absorbing layer, wherein the passivation layer includes an inorganic material;

patterning the passivation layer to define a third opening that exposes the first interconnect, a fourth opening that exposes the second interconnect, and fifth openings that expose the bonding pads;

patterning the shock-absorbing layer comprises patterning the shock-absorbing layer to define sixth openings that expose the bonding pads; and

the process further comprises:

forming conductive pads over the bonding pads; and

attaching other wires between the conductive pads and a packaging substrate, wherein attaching the wires and attaching the other wires are performed during a same operating sequence.

8. The process of claim 7 , wherein forming the conductive traces comprises:

forming a seed layer over the shock-absorbing layer and within the first opening and the second opening;

forming a patterned layer over the seed layer, wherein the patterned layer comprises seventh openings corresponding to a pattern for the conductive traces;

forming a conductive layer over the seed layer within the seventh openings;

removing the patterned layer to form exposed portions of the seed layer; and

removing the exposed portions of the seed layer, wherein the conductive traces include remaining portions of the seed layer and the conductive layer.

9. The process of claim 1 , wherein forming the conductive traces comprises forming the conductive traces that include gold.

10. The process of claim 1 , wherein forming the interconnect level comprises forming bonding pads.

11. The process of claim 10 , wherein further comprising:

forming a passivation layer over the interconnect level and before forming the shock-absorbing layer, wherein the passivation layer includes an inorganic material; and

patterning the passivation layer to define a third opening that exposes the first interconnect, a fourth opening that exposes the second interconnect, and fifth openings that expose the bonding pads.

12. The process of claim 10 , wherein patterning the shock-absorbing layer comprises patterning the shock-absorbing layer to define third openings that expose the bonding pads.

13. The process of claim 10 , further comprising:

forming conductive pads over the bonding pads; and

attaching other wires between the conductive pads and a packaging substrate.

14. The process of claim 13 , wherein attaching the wires and attaching the other wires are performed during a same operating sequence.

15. The process of claim 1 , wherein forming the conductive traces comprises forming the conductive traces such that the conductive traces abut the shock-absorbing layer.

16. The process of claim 1 , wherein forming the shock-absorbing layer comprises forming the shock-absorbing layer that comprises polyimide.

17. The process of claim 16 , wherein forming the conductive traces comprises forming the conductive traces that comprise an adhesion/harrier layer and a conductive layer.

18. The process of claim 1 , wherein forming the conductive traces comprises forming the conductive traces that comprise an adhesion/barrier layer and a conductive layer.

19. The process of claim 1 , further comprising forming a radio-frequency shielding element in a form of a grid.

20. The process of claim 19 , wherein forming the radio-frequency shielding element is performed, such that from a top view of the workpiece, the radio-frequency shielding element surrounds the conductive traces.

Assignments (30)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
Reel/Frame 037694/0264 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0823 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Sep 23, 2009
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 023273/0099 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2006
From: WANG, JAMES JEN-HO
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 018371/0215 →