Semiconductor wafer polishing apparatus, and method of polishing semiconductor wafer
View Patent ↗Aimed at thoroughly preventing abrasive and dusts from adhering onto the circuit-forming region of a wafer, improving yield ratio of semiconductor devices, and thereby improving operation rates of the individual manufacturing apparatuses in the succeeding stage, a semiconductor wafer polishing apparatus of the present invention has a polishing unit polishing the circumferential edge side of a disc-formed wafer; and a gas blowing unit blowing a gas G against the surface of the wafer, so as to separate the space over the wafer by a curtain C of the gas G between a polishing field PF in which the wafer is polished by the polishing unit and a normal field NF except the polishing field PF.
1. A semiconductor wafer polishing apparatus, comprising:
a polishing unit for polishing a circumferential edge region of a disc-formed wafer; and
a gas blowing unit for blowing a gas against a surface of said wafer, so as to separate a space over said wafer by a curtain of said gas extending continuously between said edge region in which said wafer is polished by said polishing unit, and a circuit forming region of said wafer.
2. The semiconductor wafer polishing apparatus as claimed in claim 1 , wherein said gas blowing unit blows a non-reactive gas as said gas.
3. The semiconductor wafer polishing apparatus as claimed in claim 1 , wherein said polishing unit is structured and arranged to continuously polish said circumferential edge region of said wafer in a circumferential direction, and
said gas blowing unit comprises a ring-shaped gas blowing port for blowing said gas so as to form said curtain into a ring shape, viewed in the plane view of said surface, to thereby separate space over said wafer in a radial direction.
4. The semiconductor wafer polishing apparatus as claimed in claim 1 , wherein said polishing unit polishes a notch portion formed at a predetermined position in a circumferential direction on the circumferential edge region of said disc-formed wafer.
5. The semiconductor wafer polishing apparatus as claimed in claim 1 , further comprising a cleaning unit for cleaning said edge region of said disc-formed wafer.
6. A method of polishing a semiconductor wafer, comprising the steps of:
polishing a circumferential edge region of a disc-formed wafer, and
blowing a gas against a surface of said wafer, so as to separate space over said wafer by a curtain of said gas extending continuously between said edge region, in which said wafer is polished by said polishing unit, and a circuit-forming region of said wafer.
7. The method of polishing a semiconductor wafer as claimed in claim 6 , wherein said gas is a non-reactive gas.
8. The method of polishing a semiconductor wafer as claimed in claim 6 , wherein said polishing step comprises continuously polishing the circumferential edge region in a circumferential direction, and
further wherein said blowing step comprises blowing said curtain of said gas in a ring shape, viewed in the plane view of said surface, thereby separating space over said wafer by said curtain in a radial direction.
9. The method of polishing a semiconductor wafer as claimed in claim 6 , wherein said polishing step comprises polishing a notch portion formed at a predetermined position in a circumferential direction on the circumferential edge region of said wafer.
10. The method of polishing a semiconductor wafer as claimed in claim 6 , wherein,
said blowing step blows the gas perpendicularly against the surface of said wafer continuously along an operational boundary between said edge region and said circuit-forming region of said wafer, thereby forming the curtain of said gas between said edge region and said circuit-forming region.
11. A semiconductor wafer polishing apparatus, comprising:
a polishing unit for polishing a circumferential edge region of a disc-formed wafer; and
a gas blowing unit for blowing a gas against a surface of said wafer,
the gas blowing unit having a gas blowing port structured and arranged to direct said gas perpendicularly against said surface so that the gas blows directly against the wafer, and so that the gas blows as a curtain extending continuously along an operational boundary between said edge region in which the wafer is polished and a circuit-forming region of said surface to be protected from polishing debris, with a space formed over said wafer by the curtain of said gas extending continuously between said edge region, in which said wafer is polished by said polishing unit, and said circuit-forming region.