Method of fabricating metal-insulator-metal (MIM) device with stable data retention
View Patent ↗In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a Ta 2 O 5 layer on the first electrode. A second electrode of β-Ta is provided on the Ta 2 O 5 layer. Such a device exhibits strong data retention, along with resistance to performance degradation under high temperatures.
1. A method of fabricating a metal-insulator-metal (MIM) device comprising:
providing a first electrode;
providing a Ta oxide layer on the first electrode; and
providing a second electrode on the Ta oxide;
wherein an electrode of the first and second electrodes comprises Ta.
2. The method of claim 1 wherein said electrode of the first and second electrodes is α-Ta.
3. The method of claim 1 wherein the other of the first and second electrodes comprises Ta.
4. The method of claim 1 wherein said electrode of the first and second electrodes is β-Ta.
5. A method of fabricating a metal-insulator-metal (MIM) device comprising:
providing a first electrode comprising Ta;
oxidizing Ta of the first electrode to form a Ta oxide layer on the first electrode; and
providing a second electrode on the Ta oxide layer.
6. The method of claim 5 wherein the first electrode is α-Ta.
7. The method of claim 5 wherein the second electrode is β-Ta.
8. The method of claim 1 wherein the Ta oxide layer is Ta 2 O 5 .
9. The method of claim 8 and further comprising providing an insulating layer over and along the sides of the metal-insulator-metal (MIM) device.
10. The method of claim 9 and further comprising providing an opening through the insulating layer to the second electrode.
11. A method of fabricating a metal-insulator-metal (MIM) device comprising:
providing a first electrode of α-Ta;
oxidizing Ta of the first electrode to form a Ta 2 O 5 layer on the first electrode; and
providing a second electrode of β-Ta on the Ta 2 O 5 layer.
12. The method of claim 11 and further comprising providing an insulating layer over and along the sides of the metal-insulator-metal (MIM) device.
13. The method of claim 12 and further comprising providing an opening through the insulating layer to the second electrode.
14. The method of claim 1 and further comprising said device incorporated in a system.
15. The method of claim 14 wherein the system is selected from the group consisting of a hand-held device, a vehicle, and a computer.