MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same
View Patent ↗An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
1. An MRAM memory cell having a layer system of substantially circular-disk-shaped layers, comprising:
two magnetic layers separated by a non-magnetic intermediate layer, the first magnetic layer exhibiting hard-magnetic behavior, the second magnetic layer exhibiting soft-magnetic behavior such that information is stored by a magnetization state of the storage layer, the storage layer having a weak intrinsic anisotropy defining a magnetic preferred direction,
wherein magnetization of the reference layer is substantially parallel to a remnant magnetization in the interior of the storage layer, the remnant magnetization occurring as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
2. The MRAM memory cell as claimed in claim 1 , wherein the magnetization of the reference layer is directed at an angle α with respect to the preferred direction of the intrinsic anisotropy of the storage layer, the angle α having a value in the range of 10° to 50°.
3. The MRAM memory cell as claimed in claim 1 , wherein the materials of the reference layer and/or storage layer are based on an alloy comprising at least one of Co, Ni and Fe.
4. The MRAM memory cell as claimed in claim 3 , wherein the materials of the storage layer and/or reference layer are amorphous alloys.
5. The MRAM memory cell as claimed in claim 1 , wherein the storage layer has a weak intrinsic anisotropy field strength of less than 1kA/m.