Low threshold voltage PMOS apparatus and method of fabricating the same
A P-type metal oxide semiconductor (PMOS) device can include an N-well that does not extend completely throughout the active region of the PMOS device. For example, the PMOS device can be fabricated using a masking step to provide an N-well having an inner perimeter and an outer perimeter. The inner perimeter of the N-well surrounds at least a portion of the active region of the PMOS device. According to an embodiment, the inner perimeter of the N-well surrounds the entire active region. The PMOS device can include a deep N-well in contact with the N-well.
1. A metal oxide semiconductor (MOS) device, comprising:
an active region;
a first region implanted into a semiconductor substrate coupled to the active region forming a drain;
a second region implanted into the semiconductor substrate coupled to the active region forming a source, wherein the source is implanted with a substantially similar implant type as compared to the drain; and
a first implant region in contact with the drain, wherein the first implant region is implanted with a substantially opposite implant type as compared to the drain, the first implant region more heavily implanted than a well that is attached to a portion of the active region.
2. The MOS device of claim 1 , further comprising:
a second implant region in contact with the source, wherein the second implant region is implanted with the substantially opposite implant type as compared to the drain, the second implant region more heavily implanted than the well.
3. The MOS device of claim 2 , wherein the first implant region is in contact with the second implant region.
4. The MOS device of claim 2 , wherein the second implant region includes a second halo implant.
5. The MOS device of claim 1 , wherein the drain is implanted with a p-type implant to form a first P+ region and the drain is implanted with the p-type implant to form a second P+ region.
6. The MOS device of claim 1 , wherein the first implant region includes a first halo implant.
7. The MOS device of claim 1 , wherein the well includes an inner perimeter and an outer perimeter, wherein the inner perimeter surrounds at least a portion of the active region.
8. The MOS device of claim 7 , wherein the well is implanted with a n-type implant to form an N-well.
9. A metal oxide semiconductor (MOS) device, comprising:
an active region;
a well having an inner perimeter and an outer perimeter, wherein the inner perimeter surrounds at least a portion of the active region; and
a first implant region in contact with a drain, wherein the first implant region is implanted with a substantially similar implant type as compared to the well, the first implant region more heavily implanted than the well.
10. The MOS device of claim 9 , further comprising:
a second implant region in contact with a source, wherein the second implant region is implanted with the with a substantially similar implant type as compared to the well, the second implant region more heavily implanted than the well.
11. The MOS device of claim 10 , wherein the first implant region is in contact with the second implant region.
12. The MOS device of claim 10 , wherein the second implant region includes a second halo implant.
13. The MOS device of claim 9 , wherein the first implant region includes a first halo implant.