THIN FILM ACOUSTIC REFLECTOR STACK
The invention refers to a method for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process. The invention further comprises an acoustic reflector stack fabricated thereby and an arrangement for performing the method.
1 . A method for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein at least one of the layers is deposited by a reactive dc magnetron sputtering process.
2 . A method according to claim 1 , wherein the sputtering process is pulsed.
3 . A method according to claim 1 , wherein both layers are deposited alternately by the sputtering process.
4 . A method according to claim 1 , wherein a plurality of substrates are placed in a vacuum reaction chamber containing an inert gas and a reaction gas, comprising the steps of:
h) moving the substrates through a deposition zone for the first material, having a magnetron sputter source with a precursor of the first material, collecting a thin layer of the first material,
i) moving the substrates through a reaction zone, where the partial pressure of the oxygen is higher than in the deposition zone,
j) repeating the steps a) and b) until the layer of the first material has reached a desired thickness,
k) moving the substrates through a deposition zone for the second material, having a magnetron sputter source with a precursor of the second material, collecting a thin layer of the second material,
l) moving the substrates through an oxidation zone, where the partial pressure of the oxygen is higher than in the deposition zone,
m) repeating the steps d) and e) until the layer of the second material has reached a desired thickness,
n) repeating the steps a) and f) until the number of layers of the first and the second material has reached a desired number,
5 . A method according to claim 4 , wherein one of the precursors is silicon.
6 . A method according to claim 4 , wherein one of the precursors is tantalum.
7 . A method according to claim 4 , wherein one of the precursors is titanium
8 . A method according to claim 4 , wherein the reaction gas is oxygen.
9 . A method according to claim 4 , wherein the reaction gas is nitrogen.
10 . A method according to claim 4 , wherein the thin layers are less than five monolayers.
11 . A thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process.
12 . An Arrangement for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process, comprising:
e) a reaction chamber having means for evacuating and for controlled gas supply,
f) in the reaction chamber a rotating support device, on the periphery of which mounts for substrates are arranged,
g) at least two targets and at least one microwave source being arranged on the periphery of the reaction chamber,
h) magnets being mounted behind the targets, seen from the interior of the reaction chamber, forming a magnetic cage in order to keep and concentrate discharge electrons near to the target surface.