Method of manufacturing semiconductor device
View Patent ↗To provide a technology capable of improving reliability and manufacturing yield of a semiconductor device by reducing variations of electrical characteristics in connection hole portions. After a semiconductor wafer is placed over a wafer stage provided in a chamber for dry cleaning treatment of a deposition system, dry cleaning treatment is performed to a principal surface of the semiconductor wafer by supplying reducing gas, sequentially, heat treatment is performed to the semiconductor wafer at a first temperature of 100 to 150° C. by a showerhead which is maintained at 180° C. Next, after the semiconductor wafer is vacuum transferred from the chamber to a chamber for heat treatment, heat treatment is performed to the semiconductor wafer at a second temperature of 150 to 400° C. in the chamber, thereby removing a product remaining over the principal surface of the semiconductor wafer.
1. A method of manufacturing a semiconductor device in which a metal film is embedded inside connection holes opening in an insulating film through a barrier metal film; before depositing the barrier metal film inside the connection holes after forming the connection holes in the insulating film, comprising:
(a) placing a semiconductor wafer over a wafer stage provided in a first chamber;
(b) performing dry cleaning treatment to insides of the connection holes by supplying reducing gas, which is excited by a plasma, through a showerhead set above the wafer stage;
(c-1) after (b) performing the dry cleaning treatment, lifting the semiconductor wafer from the wafer stage in order to position a principal surface of the semiconductor wafer closer to the showerhead than when the semiconductor wafer is on the wafer stage;
(c-2) performing a first heat treatment to the semiconductor wafer at a first temperature utilizing a heating temperature of the showerhead;
(d) transferring the semiconductor wafer from the first chamber to a second chamber; and
(e) performing a second heat treatment to the semiconductor wafer at a second temperature higher than the first temperature in the second chamber.
2. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the first temperature is 100 to 150° C.
3. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the second temperature is 150 to 400° C.
4. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the second temperature is 165 to 350° C.
5. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the second temperature is 180 to 220° C.
6. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the second temperature is 200° C.
7. The method of manufacturing the semiconductor device according to claim 1 ,
wherein transfer of the semiconductor wafer between the first chamber and the second chamber is performed by vacuum transfer.
8. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the metal film is a tungsten film, and the barrier metal film is a stacked film in which a titanium nitride film is stacked over a titanium film or a tungsten nitride film.
9. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the metal film is a copper film, and the barrier metal film is a titanium nitride film, a tantalum nitride film, a stacked film in which a tantalum film is stacked over the tantalum nitride film or a stacked film in which a ruthenium film is stacked over the tantalum nitride film.
10. The method of manufacturing the semiconductor device according to claim 1 ,
wherein the metal film is an aluminum film, and the barrier metal film is a stacked film in which a titanium nitride film is stacked over a titanium film or a tungsten nitride film.
11. The method of manufacturing the semiconductor device according to claim 1 , wherein in (b) performing the dry cleaning treatment, the semiconductor wafer is positioned 17.8±5.1 mm from the showerhead, and in (c-2) performing the first heat treatment, the semiconductor wafer is 3.8±2.6 mm from the showerhead.