Silicon-on-insulator differential amplifier circuit
View Patent ↗A differential amplifier formed on a silicon-on-insulator substrate, including means to prevent the bodies of its differential input transistors from charging to unwanted potentials in the standby state. In one aspect of the invention, the means takes the form of switching transistors inserted between the differential input transistors and their loads. In another aspect of the invention, the means takes the form of switching transistors inserted between the sources and bodies of the differential input transistors. In another aspect of the invention the means is a regulator section that holds the bodies of the differential input transistors at an appropriate potential level.
1. A differential amplifier circuit formed on an SOI substrate, comprising:
a bias section activated and deactivated by an enable signal, outputting a predetermined bias potential when activated, and outputting a first power-supply potential when deactivated;
a first MOS transistor of a first channel type, having a source receiving the first power-supply potential, a gate receiving the potential output by the bias section, and a drain connected to a first node;
a second MOS transistor of the first channel type, having a body, a source connected to the first node, a gate receiving a first differential input signal, and a drain connected to a second node;
a third MOS transistor of the first channel type, having a body, a source connected to the first node, a gate receiving a second differential input signal, and a drain connected to a third node;
a fourth MOS transistor of the first channel type, having a source connected to the first node, a gate receiving the enable signal, and a drain connected to the body of the second MOS transistor of the first channel type;
a fifth MOS transistor of the first channel type, having a source connected to the first node, a gate receiving the enable signal, and a drain connected to the body of the third MOS transistor of the first channel type;
a source-tied first MOS transistor of a second channel type, having a source receiving a second power-supply potential, a gate connected to the second node, and a drain connected to the second node;
a source-tied second MOS transistor of the second channel type, having a source receiving the second power-supply potential, a gate connected to the second node, and a drain connected to the third node; and
an output section connected to the third node, generating an output signal from the potential of the third node.
2. The differential amplifier circuit of claim 1 , wherein the first channel type is an n-channel type and the second channel type is a p-channel type.
3. The differential amplifier circuit of claim 1 , wherein the first channel type is a p-channel type and the second channel type is an n-channel type.
4. The differential amplifier circuit of claim 1 , wherein the output section comprises:
a source-tied third MOS transistor of the second channel type, having a gate connected to the third node; and
a resistor connected in series with the source-tied third MOS transistor of the second channel type.
5. The differential amplifier circuit of claim 1 , further comprising a sixth MOS transistor of the second channel type, having a source receiving the second power-supply potential, a gate receiving the enable signal, and a drain connected to the third node.