Semiconductor device and method of manufacturing same
View Patent ↗An electrode on a semiconductor substrate includes a polysilicon layer, a silicon implanted layer on the polysilicon layer, a tungsten nitride layer on the silicon implanted layer, a tungsten nitride layer on the silicon implanted layer, and a tungsten layer on the tungsten nitride layer. The layer between the polysilicon layer and the tungsten nitride layer may be either a tungsten silicon nitride layer or a silicon-germanium layer.
1. A method of manufacturing a semiconductor device comprising:
forming a gate insulating film on a semiconductor substrate;
forming a polysilicon layer on a said gate insulating film;
forming a tungsten nitride layer on a polysilicon layer;
implanting germanium into said tungsten nitride layer to form a germanium implanted layer between said polysilicon layer and said tungsten nitride layer;
thermally treating said germanium layer to produce a silicon-germanium layer; and
forming a tungsten layer on said tungsten nitride layer.