Circuit pre-charge to sense a memory line
View Patent ↗Commonly, read times of a memory line are slowed due to voltage overshoot and/or voltage undershoot. To eliminate these problems, a control component can manage voltage while a leakage component manages timing of voltage. This allows for a line pre-charge that produces increase read times. The control component can implement as a variable resistor that modifies value to compensate for temperature. The leakage component can include a capacitor configuration that allows voltage to pass.
1. A system, comprising:
a control component that is configured to control a resistance value of a variable resistor component to regulate a pulse width of a pre-charge voltage pulse applied to a metal line associated with a cell component within a specified time range based at least in part on temperature associated with the variable resistor component to maintain the pulse width within the specified time range to control a pre-charge voltage level applied to the metal line, wherein the control component is further configured to apply the pre-charge voltage pulse to the metal line to facilitate reducing an amount of time utilized to read data stored in the cell component associated with the metal line; and
a leakage component that is configured to govern a pulse height within a specified pulse height range, wherein the pre-charge voltage level is based at least in part on the pulse width and the pulse height.
2. The system of claim 1 , the control component is further configured to comprise a variable resistor component, wherein the control component is further configured to adjust a resistance level of the variable resistor component to regulate the pulse width.
3. The system of claim 2 , the variable resistor component adjusts the resistance level as a function of temperature in accordance with length of the pulse width, wherein adjustment of the resistance level facilitates control of the pulse width to maintain the pulse width within the specified time range.
4. The system of claim 1 , the leakage component is further configured to govern pulse height through removal of voltage from the metal line when the pre-charge voltage level is over maximum voltage level of a specified pre-charge voltage range.
5. The system of claim 1 , the pulse width is a function of time and the pulse height is a function of voltage.
6. The system of claim 1 , further comprising:
a function component that is configured to produce a voltage that is used as a basis for the pre-charge voltage.
7. The system of claim 1 , wherein a control component is further configured to apply the pre-charge voltage to the metal line prior to applying a read voltage to the metal line to read the data stored in the cell component.
8. The system of claim 1 , further comprising:
an access component that is configured to read the data associated with the memory line when the pulse width and the pulse height align in an appropriate configuration.
9. A method, comprising:
modifying a resistance value of a variable resistor component to control length of a pulse width of a pre-charge voltage pulse applied to a metal line associated with a cell component as a function of temperature associated with the variable resistor component to maintain the pulse width within a specified range of time to control a pre-charge voltage level applied to the metal line; and
applying the pre-charge voltage pulse to the metal line to facilitate reducing an amount of time utilized to read data stored in the cell component associated with the metal line.
10. The method of claim 9 , further comprising:
applying the pre-charge voltage to the metal line prior to applying a read voltage to the metal line to read the data stored in the cell component.
11. The method of claim 9 , further comprising:
monitoring the pre-charge voltage level applied to the metal line.
12. The method of claim 9 , further comprising:
reading data stored in the cell component associated with the metal line when the pre-charge voltage level is within the specified range.
13. The method of claim 9 , further comprising:
determining a data value associated with the cell component.
14. The method of claim 9 , further comprising:
transmitting a data value associated with the cell component to an auxiliary location.
15. A system, comprising:
means for modifying a resistance value of a variable resistor component to control length of a pulse width of a pre-charge voltage pulse applied to a metal line associated with a cell component as a function of temperature associated with the variable resistor component to maintain the pulse width within a specified range of time to control a pre-charge voltage level applied to the metal line; and
means for applying the pre-charge voltage pulse to the metal line to facilitate reducing an amount of time utilized to read data stored in the cell component associated with the metal line.
16. The system of claim 15 , further comprising:
means for controlling the pre-charge voltage level to maintain the pre-charge voltage level within a specified voltage range to reduce voltage undershoot and voltage overshoot of the specified voltage range.
17. The system of claim 15 , further comprising:
means for monitoring the pre-charge voltage level of a pre-charge voltage applied to the metal line.
18. The system of claim 15 , further comprising:
means for activating a circuit to read data associated with the metal line when the pre-charge voltage level is within the specified range.
19. The system of claim 15 , further comprising:
means for determining a data value of the cell component associated with the metal line.
20. The system of claim 15 , further comprising:
means for transmitting a data value associated with the cell component to an auxiliary location.