Non-volatile memory
View Patent ↗Non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.
1. A non-volatile memory unit, comprising:
a substrate having a source region, a drain region and a channel region, the channel region separates the source region and the drain region;
an electrically insulating layer adjacent to the source region, drain region and channel region layer;
a floating gate electrode adjacent to the electrically insulating layer, the electrically insulating layer separates the floating gate electrode from the channel region, the floating gate electrode having a floating gate major surface comprising a carbon based electron field emitter or a tungsten based field emitter;
a control gate electrode having a control gate major surface comprising a carbon based electron field emitter or a tungsten based field emitter, the control gate major surface opposing the floating gate major surface; and
a vacuum layer at least partially separating the control gate major surface from the floating gate major surface;
wherein the electrically insulating layer has a thickness value in a range from 1 to 5 nm separating the floating gate electrode from the substrate.
2. A non-volatile memory unit according to claim 1 , wherein the vacuum layer is a pressure of 1000 Pa or less.
3. A non-volatile memory unit according to claim 1 , wherein the vacuum layer has a thickness value in a range from 50 nm to 250 nm.
4. A non-volatile memory unit according to claim 1 , wherein electrons move between the control gate major surface and the floating gate major surface through the vacuum layer.
5. A non-volatile memory unit according to claim 1 , wherein the control gate major surface and the floating gate major surface comprise a diamond based electron field emitter.
6. A non-volatile memory unit according to claim 1 , wherein application of a first polarity voltage across the floating gate electrode and the control gate electrode moves electrons from the control gate electrode through the vacuum layer to the floating gate electrode.
7. A non-volatile memory unit according to claim 6 , wherein application of a second polarity voltage across the floating gate electrode and the control gate electrode moves electrons from the floating gate electrode through the vacuum layer to the control gate electrode, the second polarity voltage is an opposite polarity from the first polarity.
8. A non-volatile memory unit, comprising:
a substrate having a source region, a drain region and a channel region, the channel region separates the source region and the drain region;
an electrically insulating layer adjacent to the source region, drain region and channel region;
a floating gate electrode adjacent to the electrically insulating layer, the electrically insulating layer separates the floating gate electrode from the channel region, the floating gate electrode having a floating gate major surface comprising a carbon based electron field emitter or a tungsten based field emitter;
a control gate electrode having a control gate major surface comprising a carbon based electron field emitter or a tungsten based field emitter, the control gate major surface opposing the floating gate major surface; and
a gas layer at least partially separating the control gate electrode from the floating gate electrode;
wherein the electrically insulating layer has a thickness value in a range from 1 to 5 nm separating the floating gate electrode from the substrate.
9. A non-volatile memory unit according to claim 8 , wherein the gas layer comprises an inert gas.
10. A non-volatile memory unit according to claim 8 , wherein the gas layer comprises a noble gas.
11. A non-volatile memory unit according to claim 8 , wherein the gas layer has a thickness value in a range from 50 nm to 250 nm.
12. A non-volatile memory unit according to claim 8 , wherein electrons move between the gas layer and the floating gate major surface.
13. A non-volatile memory unit according to claim 8 , wherein application of a first polarity voltage across the floating gate electrode and the control gate electrode moves electrons from the gas layer to the floating gate electrode.
14. A non-volatile memory unit according to claim 13 , wherein application of a second polarity voltage across the floating gate electrode and the control gate electrode moves electrons from the floating gate electrode to the gas layer, the second polarity voltage is an opposite polarity from the first polarity.