High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance
An ultraviolet light absorbent silicon oxynitride layer overlies a memory cell including a pair of source/drains, a gate insulator, a floating gate, a dielectric layer, and a control gate. A conductor is disposed through the silicon oxynitride layer for electrical connection to the control gate, and another conductor is disposed through the silicon oxynitride layer for electrical connection to a source/drain.
1. An electronic structure comprising:
a transistor comprising a control gate, wherein the control gate is a single layer;
an insulator layer overlying the transistor, wherein the insulator layer is a single layer;
a layer comprising silicon oxynitride overlying and in direct contact with the insulator layer;
a layer comprising silicon dioxide overlying and in direct contact with the layer comprising silicon oxynitride, wherein the layer of silicon oxynitride is a single layer;
a first conductor disposed through the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide for electrical connection to the control gate, wherein the first conductor is electrically connected to the control gate through a first silicide conductive layer;
a silicon nitride layer overlying and in direct contact with the silicon dioxide layer and the first conductor;
a silicon dioxide layer overlying and in direct contact with the silicon nitride layer; and
a third conductor disposed through the silicon nitride layer and the silicon dioxide layer to electrically connect to the first conductor, wherein a glue/barrier layer is deposited between the third conductor and the silicon nitride layer and the silicon dioxide layer.
2. The electronic structure of claim 1 wherein the transistor further comprises a pair of source/drains, a gate insulator, a floating gate, and a dielectric layer.
3. The electronic structure of claim 2 and further comprising a second conductor disposed through the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide for electrical connection to a source/drain, wherein the second conductor is electrically connected to the source/drain through a second silicide conductive layer.
4. A memory device comprising:
a memory cell comprising a transistor, wherein the transistor comprises a control gate, wherein the control gate is a single layer;
an insulator layer overlying the memory cell, wherein the insulator layer is a single layer;
a layer comprising silicon oxynitride overlying and in direct contact with the insulator layer;
a layer comprising silicon dioxide overlying and in direct contact with the layer comprising silicon oxynitride, wherein the layer of silicon oxynitride is a single layer;
a first conductor disposed through the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide for electrical connection to the control gate, wherein the first conductor is electrically connected to the control gate through a first silicide conductive layer;
a silicon nitride layer overlying and in direct contact with the silicon dioxide layer and the first conductor;
a silicon dioxide layer overlying and in direct contact with the silicon nitride layer; and
a third conductor disposed through the silicon nitride layer and the silicon dioxide layer to electrically connect to the first conductor, wherein a glue/barrier layer is deposited between the third conductor and the silicon nitride layer and the silicon dioxide layer.
5. The memory device of claim 4 wherein the memory cell is a nonvolatile memory cell.
6. The memory device of claim 5 , wherein the transistor further comprises a pair of source/drains, a gate insulator, a floating gate, and a dielectric layer.
7. The memory device of claim 4 and further comprising a second conductor disposed through the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide for electrical connection to a source/drain, wherein the second conductor is electrically connected to the source/drain through a second silicide conductive layer.
8. A memory device comprising:
a nonvolatile memory cell comprising a transistor, wherein the transistor comprises a control gate, wherein the control gate is a single layer;
an insulator layer over and in direct contact with the memory cell;
a layer comprising silicon oxynitride over and in direct contact with the insulator;
a layer comprising silicon dioxide overlying and in direct contact with the layer comprising silicon oxynitride, wherein the layer of silicon oxynitride is a single layer;
a first conductor disposed through the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide for electrical connection to the control gate, wherein the first conductor is electrically connected to the control gate through a first silicide conductive layer;
a silicon nitride layer overlying and in direct contact with the silicon dioxide layer and the first conductor;
a silicon dioxide layer overlying and in direct contact with the silicon nitride layer; and
a third conductor disposed through the silicon nitride layer and the silicon dioxide layer to electrically connect to the first conductor, wherein a glue/barrier layer is deposited between the third conductor and the silicon nitride layer and the silicon dioxide layer.
9. The memory device of claim 8 wherein the transistor further comprises a pair of source/drains, a gate insulator, a floating gate, and a dielectric layer.
10. The memory device of claim 8 and further comprising a second conductor disposed through the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide for electrical connection to a source/drain, wherein the second conductor is electrically connected to the source/drain through a first silicide conductive layer.
11. The electronic structure of claim 1 wherein the insulator layer comprises Borophosphosilicate glass (BPSG).
12. The memory device of claim 4 wherein the insulator layer comprises Borophosphosilicate glass (BPSG).
13. The memory device of claim 8 wherein the insulator layer comprises Borophosphosilicate glass (BPSG).
14. The electronic structure of claim 1 further comprising a glue/barrier layer between the first conductor and the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide.
15. The memory device of claim 4 further comprising a glue/barrier layer between the first conductor and the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide.
16. The memory device of claim 8 further comprising a glue/barrier layer between the first conductor and the insulator, the layer comprising silicon oxynitride, and the layer comprising silicon dioxide.