Biasing structure for write element domain control in a magnetic writer
View Patent ↗A magnetic writer includes a write element having a first domain pattern when in a quiescent state and a second domain pattern when in an active state. A biasing structure is configured to induce the write element into the first domain pattern when the magnetic writer is in the quiescent state.
1. A magnetic writer comprising:
a write element having a first domain pattern when the magnetic writer is in a quiescent state and a second domain pattern when the magnetic writer is in an active state; and
a biasing structure configured to induce the write element into the first domain pattern when the magnetic writer is not in the quiescent state.
2. The magnetic writer of claim 1 , wherein contours of the biasing structure are substantially similar to contours of the first domain pattern.
3. The magnetic writer of claim 1 , wherein the biasing structure has a generally oval shape.
4. The magnetic writer of claim 1 , wherein the biasing structure is adjacent the write element.
5. The magnetic writer of claim 1 , wherein the write element includes a write pole body and a yoke.
6. The magnetic writer of claim 5 , wherein the biasing structure is adjacent at least one of the write pole body and the yoke.
7. The magnetic writer of claim 5 , wherein the biasing structure includes a layer within one of the write pole body and the yoke.
8. The magnetic writer of claim 1 , wherein the biasing structure comprises an antiferromagnet exchange coupled to the write element.
9. The magnetic writer of claim 8 , wherein the antiferromagnet comprises a synthetic antiferromagnet (SAF).
10. The magnetic writer of claim 1 , wherein the biasing structure comprises a permanent magnet.
11. A magnetic writer comprising:
a write element including a write element tip and a write element body, wherein the write element body has a first domain pattern when the magnetic writer is in a quiescent state and a second domain pattern when the magnetic writer is in an active state; and
a biasing structure adjacent to or within the write element and having a shape that is based on the first domain pattern.
12. The magnetic writer if claim 11 , wherein contours of the biasing structure are substantially similar to contours of the first domain pattern.
13. The magnetic writer of claim 12 , wherein the biasing structure has a generally oval shape.
14. The magnetic writer of claim 11 , wherein the biasing structure comprises an antiferromagnet exchanged coupled to the write element.
15. The magnetic writer of claim 14 , wherein the antiferromagnet comprises a synthetic antiferromagnet (SAF).
16. The magnetic writer if claim 11 , wherein the biasing structure comprises a permanent magnet.
17. A magnetic writer comprising:
a write element including a write element body having a write element tip, wherein the write element body has a first domain pattern when the magnetic writer is in a quiescent state and a second domain pattern when the magnetic writer is in an active state; and
a biasing structure adjacent to or within the write element and having a shape that is substantially similar to at least a portion of the first domain pattern such that the biasing structure induces the write element into the first domain pattern when the magnetic writer is in the quiescent state.
18. The magnetic writer of claim 17 , wherein the biasing structure comprises an antiferromagnet exchange coupled to the write element.
19. The magnetic writer of claim 18 , wherein the antiferromagnet comprises at least one of a synthetic antiferromagnet (SAF) or a permanent magnet.
20. The magnetic writer of claim 17 , wherein the biasing structure has a generally oval shape.