Method of annealing a dielectric layer
View Patent ↗A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the second dielectric layer using nitrous oxide; and after the annealing the second dielectric layer, forming a gate electrode over the second dielectric layer.
1. A method comprising:
forming a first dielectric layer over a substrate;
forming nanoclusters over the first dielectric layer;
forming a second dielectric layer over the nanoclusters;
annealing the second dielectric layer using nitrous oxide;
after the annealing the second dielectric layer, forming a gate electrode over the second dielectric layer; and
forming a select gate electrode over the substrate and laterally adjacent the gate electrode, wherein a portion of the first dielectric layer, a portion of the nanoclusters, and a portion of the second dielectric layer are between the gate electrode and the select gate electrode.
2. The method of claim 1 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide at a temperature in a range of approximately 700 degrees Celsius to approximately 1200 degrees Celsius.
3. The method of claim 1 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide at a temperature in a range of approximately 850 degrees Celsius to approximately 1050 degrees Celsius.
4. The method of claim 1 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide for a duration in a range of approximately 15 second to approximately 90 seconds.
5. The method of claim 1 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide for a duration in a range of approximately 45 second to approximately 60 seconds.
6. The method of claim 1 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using pure nitrous oxide.
7. The method of claim 1 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide in a nitrogen-containing carrier gas.
8. The method of claim 1 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide in an argon-containing carrier gas.
9. The method of claim 1 , wherein forming the second dielectric layer comprises:
forming an oxide layer using a silicon-containing gas.
10. The method of claim 9 , wherein the forming the oxide layer using the silicon-containing comprises:
forming a high temperature oxide layer using a silicon-containing gas.
11. A method comprising:
growing a first dielectric layer over a substrate;
chemical vapor depositing nanoclusters over the first dielectric layer;
forming a second dielectric layer over the nanoclusters using a silicon-containing gas;
annealing the second dielectric layer using nitrous oxide;
after the annealing the second dielectric layer, forming a gate electrode over the second dielectric layer; and
annealing the second dielectric layer using nitrous oxide for a duration in a range of approximately 45 second to approximately 60 seconds.
12. The method of claim 11 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide at a temperature in a range of approximately 850 degrees Celsius to approximately 1050 degrees Celsius.
13. The method of claim 11 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using pure nitrous oxide.
14. The method of claim 11 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide in a nitrogen-containing carrier gas.
15. The method of claim 11 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using nitrous oxide in an argon-containing carrier gas.
16. The method of claim 11 , wherein the forming the second dielectric layer comprises:
forming a high temperature oxide layer using the silicon-containing gas.
17. A method comprising:
forming a select gate electrode over a substrate;
forming a first dielectric layer over the substrate, adjacent a sidewall of the select gate, and over the select gate;
forming nanoclusters over the first dielectric layer;
forming a second dielectric layer over the nanoclusters;
annealing the second dielectric layer using nitrous oxide; and
after the annealing the second dielectric layer, forming a control gate electrode over the second dielectric layer, wherein the control gate electrode is laterally adjacent the select gate electrode, and wherein a portion of the first dielectric layer, a portion of the nanoclusters, and a portion of the second dielectric layer are between the control gate electrode and the select gate electrode.
18. The method of claim 17 , wherein the annealing the second dielectric layer comprises:
annealing the second dielectric layer using pure nitrous oxide, using nitrous oxide in a nitrogen-containing carrier gas, or using nitrous oxide in an argon-containing carrier gas.