Semiconductor device having lands disposed inward and outward of an area of a wiring board where electrodes are disposed
The present invention provides a technique capable of suppressing variations in the height of each solder ball where an NSMD is used as a structure for each land. Vias that extend through a wiring board are provided. Lands are formed at the back surface of the wiring board so as to be coupled directly to the vias respectively. The lands are respectively formed so as to be internally included in openings defined in a solder resist. Half balls are mounted over the lands respectively. Namely, the present invention has a feature in that the configuration of coupling between each of the lands and its corresponding via both formed at the back surface of the wiring board is taken as a land on via structure and a configuration form of each land is taken as an NSMD.
1. A semiconductor device comprising:
(a) a wiring board;
(b) a semiconductor chip mounted over a first surface of the wiring board; and
(c) a plurality of wires which respectively couple a plurality of electrodes formed at the wiring board and a plurality of bonding pads formed at the semiconductor chip,
wherein the wiring board includes:
(a1) the electrodes formed at the first surface of the wiring board;
(a2) a plurality of first lands formed at the first surface of the wiring board and provided so as not to overlap with the electrodes in a plan view;
(a3) a plurality of first wirings which are formed at the first surface of the wiring board and which electrically couple the electrodes and the first lands, respectively;
(a4) a plurality of vias which are respectively formed so as to be internally contained in the first lands in a plan view and which extend through the wiring board;
(a5) a plurality of second lands which are formed at a second surface corresponding to a surface opposite to the first surface of the wiring board and formed so as to internally contain the vias in a plan view and which are electrically coupled to the vias, respectively;
(a6) a protective film formed at the second surface of the wiring board, the protective film having a plurality of first openings being larger in area than the second lands, respectively, and internally containing the second lands, respectively; and
(a7) a plurality of first protruded electrodes respectively provided at the first openings defined in the protective film and which are electrically coupled to the second lands, respectively,
wherein the wiring board is shaped in rectangular form,
wherein the electrodes are disposed along the sides of the wiring board,
wherein some of the first lands are disposed in an area lying outward from an area of the wiring board at which the electrodes are disposed, and
wherein some of the first lands are disposed in an area lying inward from the area of the wiring board at which the electrodes are disposed.
2. The semiconductor device according to claim 1 , wherein the heights of the first protruded electrodes are respectively less than or equal to 0.1 mm.
3. The semiconductor device according to claim 1 , wherein the heights of the first protruded electrodes are respectively higher than 0.1 mm.
4. The semiconductor device according to claim 1 ,
wherein each of the electrodes is shaped in rectangular form, and
wherein the second lands and the first openings are respectively shaped in circular form.
5. The semiconductor device according to claim 1 ,
wherein the wiring board is shaped in rectangular form,
wherein the electrodes are disposed at an outer peripheral portion of the wiring board, and
wherein the first lands are disposed in an area lying inward from the outer peripheral portion of the wiring board at which the electrodes are placed.
6. The semiconductor device according to claim 1 ,
wherein the vias that penetrate the wiring board respectively have diameters at the second surface of the wiring board, which are smaller than diameters thereof at the first surface of the wiring board, and
wherein the diameters of the vias become smaller as the vias proceed from the first surface of the wiring board to the second surface of the wiring board.
7. The semiconductor device according to claim 1 , wherein the semiconductor chip is of an RFIC chip used in a cellular phone.
8. The semiconductor device according to claim 7 , wherein the RFIC chip is formed with a circuit which realizes the function of modulating a baseband signal to a radio-frequency transmit signal upon transmission and the function of demodulating a radio-frequency receive signal to a baseband signal upon reception.
9. A semiconductor device comprising:
(a) a wiring board;
(b) a semiconductor chip mounted over a first surface of the wiring board; and
(c) a plurality of wires which respectively couple a plurality of electrodes formed at the wiring board and a plurality of bonding pads formed at the semiconductor chip,
wherein the wiring board includes:
(a1) the electrodes formed at the first surface of the wiring board;
(a2) a plurality of first lands formed at the first surface of the wiring board and provided so as not to overlap with the electrodes in a plan view;
(a3) a plurality of first wirings which are formed at the first surface of the wiring board and which electrically couple the electrodes and the first lands, respectively;
(a4) a plurality of vias which are respectively formed so as to be internally contained in the first lands in a plan view and which extend through the wiring board;
(a5) a plurality of second lands which are formed at a second surface corresponding to a surface opposite to the first surface of the wiring board and formed so as to internally contain the vias in a plan view and which are electrically coupled to the vias, respectively;
(a6) a protective film formed at the second surface of the wiring board, the protective film having a plurality of first openings being larger in area than the second lands respectively and internally containing the second lands, respectively; and
(a7) a plurality of first protruded electrodes respectively provided at the first openings defined in the protective film and which are electrically coupled to the second lands, respectively,
the semiconductor device further including at the second surface of the wiring board:
(a8) a plurality of third lands respectively provided so as not to overlap with the vias in a plan view;
(a9) second wirings which electrically couple certain ones of the second lands and the third lands, respectively;
(a10) a protective film formed at the second surface of the wiring board, the protective film having a plurality of second openings being smaller in area than the third lands respectively and being contained in the third lands in a plan view without exposing the second wirings; and
(a11) a plurality of second protruded electrodes respectively provided at the second openings defined in the protective film and electrically coupled to the third lands, respectively,
wherein the certain ones of the second lands respectively electrically coupled to the third lands are covered with the protective film.
10. The semiconductor device according to claim 9 , wherein the heights of the first protruded electrodes and the heights of the second protruded electrodes are both less than or equal to 0.1 mm.
11. The semiconductor device according to claim 9 , wherein the heights of the first protruded electrodes and the heights of the second protruded electrodes are both higher than 0.1 mm.
12. The semiconductor device according to claim 9 , wherein the first protruded electrodes are placed at corner portions of the wiring board.
13. The semiconductor device according to claim 9 ,
wherein the wiring board is shaped in rectangular form,
wherein the electrodes formed at the first surface of the wiring board are disposed along the sides of the wiring board, and
wherein the first protruded electrodes formed at the second surface of the wiring board are disposed in a plan view in an area lying outward from the area in which the electrodes are disposed, whereas the second protruded electrodes formed at the second surface of the wiring board are disposed in plan view in an area lying inward from the area in which the electrodes are disposed.
14. The semiconductor device according to claim 13 , wherein the first protruded electrodes are disposed at the outermost periphery of the wiring board.