Semiconductor device and method of forming a semiconductor device
A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.
1. A semiconductor device arrangement comprising:
a semiconductor device comprising:
a semiconductor substrate of a first conductivity type forming a second current electrode region, the substrate having a first surface and a second surface;
a semiconductor layer formed over the first surface of the semiconductor substrate;
a first current electrode region of the first conductivity type formed in the semiconductor layer,
a drift region of the first conductivity type between the first and the second current electrode regions,
at least one floating region of a second conductivity type formed in the drift region; and
an injector device comprising an injector region of the second conductivity type formed in the semiconductor layer, the injector device for injecting charge carriers of the second conductivity type into the drift region and the at least one floating region in response to being activated by application of an activation signal.
2. A semiconductor device arrangement of claim 1 , wherein the at least one floating region is electrically isolated from the first and second current electrode regions.
3. A semiconductor device arrangement of claim 2 , wherein the semiconductor device further comprises a semiconductor substrate forming the second current electrode region, the semiconductor layer being formed over the semiconductor substrate, and wherein the first current electrode region is formed in the semiconductor layer extending from a first surface of the semiconductor layer, and the injector device comprises an injector region of the second conductivity type formed in the semiconductor layer extending from the first surface and the drift region is formed in the semiconductor layer.
4. A semiconductor device arrangement of claim 1 , wherein the semiconductor device is one of a unipolar device, a vertical semiconductor device, a MOSFET device and an IGBT device.
5. A semiconductor device arrangement of claim 1 , wherein the semiconductor device further comprises a semiconductor substrate forming the second current electrode region, the semiconductor layer being formed over the semiconductor substrate, and wherein the first current electrode region is formed in the semiconductor layer extending from a first surface of the semiconductor layer, and the injector device comprises an injector region of the second conductivity type formed in the semiconductor layer extending from the first surface and the drift region is formed in the semiconductor layer.
6. A semiconductor device arrangement of claim 1 , wherein the injector device further comprises a contact electrode coupled to the injector region for receiving the activation signal.
7. A semiconductor device arrangement of claim 6 , wherein the semiconductor device comprises a plurality of base cells, each base cell comprising first and second current electrode regions, a drift region and at least one floating region and wherein the semiconductor device arrangement comprises one or more injector devices for the plurality of base cells.
8. A semiconductor device arrangement of claim 1 , further comprising a control electrode for controlling a flow of current through a channel between the first current electrode region and the second current electrode region.
9. A semiconductor device arrangement of claim 8 , further comprising control circuitry for providing a control signal to the control electrode to turn the semiconductor device on and for providing the activation signal to the injector device in dependence on the provision of the control signal.
10. A semiconductor device arrangement of claim 9 , wherein the control circuitry is arranged to provide the activation signal to the injector device before providing the control signal to the control electrode.
11. A semiconductor device arrangement of claim 1 , wherein the semiconductor device comprises a plurality of base cells, each base cell comprising first and second current electrode regions, a drift region and at least one floating region and wherein the semiconductor device arrangement comprises one or more injector devices for the plurality of base cells.
12. The semiconductor device of claim 1 , wherein the drift region and the at least one floating region are arranged such that the at least one floating region and the drift region are depleted when the semiconductor device is off.
13. A method of forming a semiconductor device arrangement comprising a semiconductor device, the method comprising the steps of:
providing a semiconductor substrate of a first conductivity type;
providing a semiconductor layer of the first conductivity type over the semiconductor substrate;
forming in said semiconductor layer a drift region of the first conductivity type;
forming a first current electrode region of the first conductivity type in the semiconductor layer, extending from a first surface of the semiconductor layer, the semiconductor substrate forming a second current electrode region of the semiconductor device;
forming at least one floating region of a second conductivity type in the drift region; and
forming an injector device in the semiconductor layer, the injector device comprising an injector region of the second conductivity type formed in the semiconductor layer extending from the first surface, the injector device being arranged to inject charge carriers of the second conductivity type into the semiconductor layer and the at least one floating region in response to being activated by an activation signal.
14. A method of claim 13 , wherein the at least one floating region is electrically isolated from the first and second current electrode regions.
15. A method of claim 14 , further comprising:
forming a control electrode for controlling a flow of current through a channel between the first current electrode region and the second current electrode region; and
providing control circuitry for providing a control signal to the control electrode to turn the semiconductor device on and for providing the activation signal to the injector device in dependence on the provision of the control signal.
16. A method of claim 13 , wherein the semiconductor device is one of a unipolar device, a vertical semiconductor device, a MOSFET device and an IGBT device.
17. A method of claim 13 , further comprising forming a contact electrode coupled to the injector region for receiving the activation signal.
18. A method of claim 13 , further comprising:
forming a control electrode for controlling a flow of current through a channel between the first current electrode region and the second current electrode region; and
providing control circuitry for providing a control signal to the control electrode to turn the semiconductor device on and for providing the activation signal to the injector device in dependence on the provision of the control signal.
19. A method of claim 13 , comprising forming a semiconductor device comprising a plurality of base cells, each base cell comprising the first and second current electrode regions, a drift region and at least one floating region, and forming one or more injector devices in the semiconductor layer for the plurality of base cells.
20. The method of claim 13 , wherein the forming the at least one floating region of the second conductivity type in the drift region comprises:
forming the at least one floating region of the second conductivity type in the drift region, such that the at least one floating region and the drift region are depleted when the semiconductor device is off.