Method of manufacturing a semiconductor device
View Patent ↗A method of manufacturing a semiconductor device involves the steps of: forming a plurality of product formation areas each having a circuit and a plurality of first electrode pads over a main surface of a semiconductor wafer; arranging a plurality of second electrode pads with larger pitches than the first electrode pads in each of the product formation areas; segmenting the semiconductor wafer to separate the plural product formation areas and provide a plurality of semiconductor devices each having the circuit, the plural first electrode pads and the plural second electrode pads on a first surface; and cleaning foreign matter off the first surface of the semiconductor device after the step of segmenting the semiconductor devices.
1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) providing a wiring substrate having a plurality of device forming areas each having a main surface, a back surface opposite to the main surface, and a plurality of pads formed on the back surface;
(b) after the step (a), mounting a plurality of semiconductor chips on the main surface of each of the device forming areas, respectively;
(c) after the step (b), sealing the plurality of semiconductor chips with resin;
(d) after the step (c), forming a plurality of external terminals on the pads, respectively;
(e) after the step (d), dividing the wiring substrate into a plurality of semiconductor packages having the device forming areas, respectively; and
(f) after the step (e), spraying dry ice particles to the back surface of each of the semiconductor packages.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein a particle size of each of the dry ice particles is in the range from 0.1 mm to 0.3 mm.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein after the step (e) and before the step (f), placing the semiconductor package into a socket, and testing the semiconductor package by pressing the semiconductor package.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein the test of the semiconductor package by using the socket is a burn-in step.
5. The method of manufacturing a semiconductor device according to claim 3 , wherein the steps from (a) to (e) are performed in a clean room, and
wherein the test of the semiconductor package by using the socket is performed in a non-clean room.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein the clean room has foreign matters;
wherein a size of each of the foreign matters is less than or equal to 0.5 μm; and
wherein an amount of the foreign matters in a cubic centimeter is less than or equal to 1000.
7. A method of manufacturing a semiconductor device, comprising the steps of:
(a) providing a wiring substrate having a main surface, a back surface opposite to the main surface, and a plurality of pads formed on the back surface;
(b) after the step (a), mounting a semiconductor chip on the main surface of the wiring substrate;
(c) after the step (b), sealing the semiconductor chip with resin;
(d) after the step (c), forming a plurality of external terminals on the pads, respectively;
(e) after the step (d), dicing a part of the wiring substrate; and
(f) after the step (e), spraying dry ice particles to the back surface of the wiring substrate.
8. The method of manufacturing a semiconductor device according to claim 7 , wherein a particle size of each of the dry ice particles is in the range from 0.1 mm to 0.3 mm.
9. The method of manufacturing a semiconductor device according to claim 7 , wherein after the step (e) and before the step (f), placing a semiconductor package provided from structure formed in step (e) into a socket, and testing the semiconductor package by pressing the semiconductor package.
10. The method of manufacturing a semiconductor device according to claim 9 , wherein the test of the semiconductor package by using the socket is a burn-in step.
11. The method of manufacturing a semiconductor device according to claim 9 , wherein the steps from (a) to (e) are performed in a clean room, and
wherein the test of the semiconductor package by using the socket is performed in a non-clean room.
12. The method of manufacturing a semiconductor device according to claim 11 , wherein the clean room has foreign matters;
wherein a size of each of the foreign matters is less than or equal to 0.5 μm; and
wherein an amount of the foreign matters in a cubic centimeter is less than or equal to 1000.