Thin film light emitting diode
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
1. A vertical topology light emitting device, comprising:
a GaN-based semiconductor structure having a first surface, a second surface and a side surface, the semiconductor structure comprising an active layer, wherein the first surface is opposite the second surface;
a first electrode on the first surface of the semiconductor structure;
a second electrode on the second surface of the semiconductor structure;
an insulative layer on the first surface of the semiconductor structure;
a wavelength converting layer on the insulative layer, wherein the insulative layer is disposed between the first surface of the semiconductor structure and the wavelength converting layer; and
an open space corresponding to the first electrode, wherein the open space is a portion not covered by the insulative layer and the wavelength converting layer.
2. The device according to claim 1 , wherein the wavelength converting layer comprises at least one of a fluorescent material, a tin-containing material, and a phosphor.
3. The device according to claim 1 , wherein the insulative layer comprises at least one of Si, epoxy, oxides, and nitrides.
4. The device according to claim 1 , further comprising a second insulative layer on the wavelength converting layer.
5. The device according to claim 1 , wherein the second electrode comprises a reflective layer.
6. The device according to claim 1 , wherein the insulative layer has a first part of the open space.
7. The device according to claim 1 , wherein the wavelength converting layer has a substantially uniform thickness.
8. The device according to claim 7 , wherein the wavelength converting layer has a substantially uniform thickness on at least one of the first surface, the side surface, a side surface of the first electrode, and a side surface of the second electrode, or portions thereof.
9. The device according to claim 1 , wherein the insulative layer is disposed on the side surface of the semiconductor structure and extends to at least a portion of the first surface of the semiconductor structure.
10. The device according to claim 1 , wherein the insulative layer electrically insulates the wavelength converting layer from the semiconductor structure.
11. The device according to claim 1 , wherein the wavelength converting layer is disposed on substantially the entire surface of the insulative layer.
12. The device according to claim 1 , wherein the insulative layer is disposed on substantially the entire first surface of the semiconductor structure not covered by the first electrode.
13. The device according to claim 1 , wherein the insulative layer is disposed on substantially the entire side surface of the semiconductor structure.
14. A light emitting device comprising:
a semiconductor structure having a first surface, a second surface and a side surface, the semiconductor structure comprising an active layer;
a first electrode on the first surface of the semiconductor structure;
a second electrode on the second surface of the semiconductor structure;
a wavelength converting layer on the semiconductor structure;
an insulative layer between the semiconductor structure and the wavelength converting layer, wherein at least a portion of the insulative layer is configured to avoid direct contact between the semiconductor structure and the wavelength converting layer; and
an open space corresponding to the first electrode, wherein the open space is a portion not covered by the insulative layer and the wavelength converting layer.
15. The device according to claim 14 , wherein at least a portion of the wavelength converting layer is disposed with a substantially uniform thickness on the semiconductor structure.
16. The device according to claim 15 , wherein the insulative layer in association with the at least a portion of the wavelength converting layer is configured to enhance the uniformity of light emitted from the device.
17. The device according to claim 14 , wherein the wavelength converting layer comprises at least one of a fluorescent material, a tin-containing material, and a phosphor.
18. The device according to claim 14 , wherein at least a portion of the wavelength converting layer conforms to the insulative layer.
19. The device according to claim 14 , wherein the insulative layer comprises at least one of Si, epoxy, oxides, and nitrides.
20. The device according to claim 14 further comprising a second insulative layer on the wavelength converting layer.
21. The device according to claim 14 , wherein the second electrode comprises a reflective layer.
22. The device according to claim 14 , wherein the insulative layer is disposed on the first surface and the side surface of the semiconductor structure, or portions thereof.
23. The device according to claim 14 , wherein the wavelength converting layer is disposed on substantially the entire surface of the insulative layer.
24. The device according to claim 1 , wherein the insulative layer is configured to reduce the possibility of direct contact between the semiconductor structure and the wavelength converting layer.
25. The device according to claim 1 , wherein the open space is disposed for an external electrical connection.
26. The device according to claim 14 , wherein the insulative layer is disposed on substantially the entire first surface of the semiconductor structure not covered by the first electrode.
27. The device according to claim 6 , wherein the wavelength converting layer has a second part of the open space.
28. The device according to claim 27 , wherein the first part is corresponding to the second part.
29. The device according to claim 28 , wherein the first part is aligned with the second part.
30. The device according to claim 27 , wherein the size of the first part is substantially the same as the size of the second part.