Performance optically coated semiconductor devices and related methods of manufacture
The present application disclosed various embodiments of improved performance optically coated semiconductor devices and various methods for the manufacture thereof and includes depositing a first layer of a low density, low index of refraction material on a surface of a semiconductor device, depositing a multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials on the coated surface of the semi-conductor device, selectively ablating a portion of the alternating multi-layer optical coating to expose at least a portion of the low density first layer, and selectively ablating a portion of the first layer of low density material to expose at least a portion of the semiconductor device.
1. A method of manufacturing an optically coated semiconductor device, comprising:
forming a low-stress, low density porous columnar film structure on a surface of a semiconductor device by depositing a first layer of a low density, low index of refraction material on the surface of the semiconductor device;
depositing a multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials on the coated surface of the semiconductor device;
selectively ablating a portion of the alternating multi-layer optical coating to expose at least a portion of the low density first layer using a first ablation process; and
selectively ablating a portion of the first layer of low density material to expose at least a portion of the semiconductor device using a second ablation process.
2. The method of claim 1 wherein at least one low density, low index of refraction material is applied using a resistive-source evaporation process.
3. The method of claim 1 wherein at least one low density, low index of refraction material is applied using a conventional electron-beam deposition process.
4. The method of claim 1 wherein at least one high density, high index of refraction material is applies using a magnetron sputtering process.
5. The method of claim 1 wherein at least one high density, high index of refraction material is applies using an ion-beam sputtering processes.
6. The method of claim 1 wherein at least one high density, high index of refraction material is applies using a cathodic-arc deposition process.
7. The method of claim 1 wherein at least one high density, high index of refraction material is applies using an ion-assisted electron-beam deposition process.
8. The method of claim 1 wherein at least one high density, high index of refraction material is applies using an ion-plating process.
9. The method of claim 1 wherein the multi-layer optical coating is selectively ablated using physical ablating processes.
10. The method of claim 9 wherein the physical ablating process comprises ion beam milling.
11. The method of claim 1 wherein the multi-layer optical coating is selective ablated using chemical ablating processes.
12. The method of claim 11 wherein the chemical ablating process comprises hydrofluoric acid processing.
13. The method of claim 1 wherein the first layer is ablated using a controlled chemical etching process.
14. A method of manufacturing an optically coated semiconductor device, comprising:
forming a low-stress, low density porous columnar film structure on a surface of a semiconductor device by depositing a first layer of a low density, low index of refraction material on the surface of the semiconductor device;
depositing a multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials on the coated surface of the semiconductor device;
selectively ablating a portion of the alternating multi-layer optical coating using a physical ablation process to expose at least a portion of the low density first layer; and
selectively ablating a portion of the first layer of low density material using a controlled chemical etching process to expose at least a portion of the semiconductor device.
15. The method of claim 14 wherein at least one low density, low index of refraction material is applied using a resistive-source evaporation process.
16. The method of claim 14 wherein at least one low density, low index of refraction material is applied using a conventional electron-beam deposition process.
17. The method of claim 14 wherein at least one high density, high index of refraction material is applies using a magnetron sputtering process.
18. The method of claim 14 wherein at least one high density, high index of refraction material is applies using an ion-beam sputtering processes.
19. The method of claim 14 wherein at least one high density, high index of refraction material is applies using a cathodic-arc deposition process.
20. The method of claim 14 wherein at least one high density, high index of refraction material is applies using an ion-assisted electron-beam deposition process.
21. The method of claim 14 wherein at least one high density, high index of refraction material is applies using an ion-plating process.
22. The method of claim 14 wherein the physical ablating process comprises ion beam milling.