Floating body memory cell system and method of manufacture
A plurality of integrated circuit features are provided in the context of an array of memory cells including a plurality of word lines and a plurality of bit lines. Each memory cell includes a floating body or is volatile memory. The aforementioned features may include, among others, an option whereby the foregoing bit lines may be situated below a channel region of corresponding memory cells, etc.
1. An integrated circuit, comprising:
an array of memory cells including a plurality of word lines and a plurality of bit lines, where each memory cell includes a writeable floating body and a polysilicon field conductor positioned below the writeable floating body and between a pair of the plurality of word lines or a pair of the plurality of bit lines;
wherein the bit lines extend in a first direction that is different from a second direction in which the current flows through the floating body of corresponding memory cells.
2. The integrated circuit as recited in claim 1 , wherein the first direction is perpendicular to the second direction.
3. The integrated circuit as recited in claim 1 , wherein the word lines are disposed in a third direction parallel with the second direction.
4. The integrated circuit as recited in claim 1 , wherein:
each memory cell is equipped with at least one diffusion region and at least one channel region; and
borders between the at least one diffusion region and the at least one channel region are self-aligned to a corresponding bit line.
5. The integrated circuit as recited in claim 4 , wherein the channel region is formed on a planarized surface.
6. An integrated circuit, comprising:
an array of memory cells including a plurality of word lines and a plurality of bit lines, where each memory cell includes a writeable floating body and a polysilicon field conductor positioned below the writeable floating body and between a pair of the plurality of word lines or a pair of the plurality of bit lines;
wherein the bit lines extend in a first direction that is parallel to a second direction in which corresponding common lines extend.
7. The integrated circuit as recited in claim 6 , wherein the first direction is coplanar with the second direction in a vertical plane.
8. The integrated circuit as recited in claim 6 , wherein the word lines and the bit lines are perpendicular with respect to each other.
9. An integrated circuit, comprising:
an array of volatile memory cells including a plurality of word lines and a plurality of bit lines, where each memory cell includes a floating body and a polysilicon field conductor positioned below the floating body and between a pair of the plurality of word lines or a pair of the plurality of bit lines;
wherein at least a portion of the floating body includes a recrystallized semiconductor material.
10. The integrated circuit as recited in claim 9 , wherein the floating body is formed on a planarized surface.
11. An integrated circuit, comprising:
an array of volatile memory cells including a plurality of word lines and a plurality of bit lines, where each memory cell includes a floating body in a channel region thereof which is formed on a planarized surface, each memory cell also including a polysilicon field conductor positioned below the floating body and between a pair of the plurality of word lines or a pair of the plurality of bit lines;
wherein at least one of the bit lines corresponding to the floating body is situated at a first side with respect to the floating body and at least one of the word lines corresponding to the floating body is situated at a second side with respect to the floating body.
12. The integrated circuit as recited in claim 11 , wherein the bit lines are formed on a planarized surface.
13. The integrated circuit as recited in claim 11 , wherein the word lines and the bit lines are perpendicular with respect to each other.
14. An integrated circuit, comprising:
an array of memory cells including a plurality of word lines and a plurality of bit lines, where a plurality of the memory cells are volatile memory cells and each memory cell includes a channel region and a polysilicon field conductor positioned below the channel region and between a pair of the plurality of word lines or a pair of the plurality of bit lines;
wherein the bit lines are formed as rails, and the channel region of each memory cell includes a first deposited material.
15. The integrated circuit as recited in claim 14 , wherein the rails include a second deposited material.
16. The integrated circuit as recited in claim 15 , wherein the rails are formed by depositing a filler material over and between the second deposited material and etching the filler material.
17. The integrated circuit as recited in claim 14 , wherein the bit lines are situated below the channel region of corresponding memory cells.