Memory device with improved data retention
View Patent ↗The present memory device include first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the first and second and into which ions from the passive layer may be provided, and from which the ions may be provided into the passive layer. The active layer is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone.
1. A method of fabricating a memory device comprising:
providing a first electrode;
providing a passive layer on the first electrode;
providing a material on the passive layer, the material having a first diffusion coefficient;
introducing an impurity into the material, the combined material and impurity providing an active layer, the combined material and impurity having a second diffusion coefficient different from the first diffusion coefficient; and
providing a second electrode on the active layer.
2. The method of claim 1 wherein the second diffusion coefficient is lower than the first diffusion coefficient.
3. The method of claim 2 wherein the material comprises copper.
4. The method of claim 3 wherein the material comprises Cu 2 O.
5. The method of claim 4 wherein the impurity comprises metal atoms.
6. The method of claim 5 wherein the impurity comprises aluminum.
7. The method of claim 5 wherein the impurity comprises indium.
8. A method of fabricating a memory device comprising:
providing a first electrode;
providing a passive layer on the first electrode;
providing a material on the passive layer, the material having a first diffusion coefficient;
introducing an impurity into the material, the combined material and impurity providing an active layer, the combined material and impurity having a second diffusion coefficient different from the first diffusion coefficient, wherein a charged specie from the passive layer may be provided into the active layer, and from which the charged specie may be provided into the passive layer; and
providing a second electrode on the active layer.
9. The method of claim 8 wherein the second diffusion coefficient is lower than the first diffusion coefficient.
10. The method of claim 9 wherein the material comprises copper.
11. The method of claim 10 wherein the material comprises Cu 2 O.
12. The method of claim 11 wherein the impurity comprises metal atoms.
13. The method of claim 12 wherein the impurity comprises aluminum.
14. The method of claim 12 wherein the impurity comprises indium.