Oscillating apparatus
View Patent ↗An oscillating apparatus includes: a transfer gate including a P-channel transistor and a N-channel transistor; a first inverter for inverting an output signal of the transfer gate and outputting the inverted output signal of the transfer gate; a second inverter for inverting the output signal of the first inverter and outputting the inverted output signal of the first inverter; a third inverter for inverting the output signal of the first inverter and outputting the inverted output signal of the first inverter; a fourth inverter for inverting the output signal of the third inverter and outputting the inverted output signal of the third inverter to an input-terminal of the transfer gate; a first capacitor connected between an output-terminal of the transfer gate and an output-terminal of the second inverter; and a second capacitor connected between the output-terminal of the transfer gate and a reference potential node.
1. An oscillating apparatus comprising:
a band gap circuit including
a first PNP transistor having a base and a collector coupled to a reference potential node respectively,
a second PNP transistor having a base and a collector coupled to the reference potential node respectively, and
a first resistor coupled to an emitter of the second PNP transistor at one end, wherein
the band gap circuit generates a band gap voltage by controlling a potential at the other end of the first resistor so that it becomes equal to an emitter potential of the first PNP transistor;
a transfer gate including a P-channel transistor and a N-channel transistor;
a reference current generation circuit that generates reference currents by summing a positive dependence current and a negative dependence current, the reference current generation circuit includes
a positive dependence current generation circuit for generating a positive dependence current that has a positive dependence on absolute temperature, the positive dependence current generation circuit includes
a third PNP transistor having a collector and a base coupled to the reference potential node respectively,
a second resistor coupled to an emitter of the third PNP transistor at one end, and
a first control circuit for controlling a positive dependence current flowing through the second resistor in such a way that a potential of the other end of the second resistor becomes equal to the band gap voltage, and
a negative dependence current generation circuit for generating a negative dependence current that has a negative dependence on absolute temperature, the negative dependence current generation circuit includes
a third resistor coupled to the reference potential node at one end, and
a second control circuit for controlling a negative dependence current flowing through the third resistor in such a way that a potential of the other end of the third resistor becomes equal to the emitter potential of the first PNP transistor; and
a trimming current digital-to-analog conversion circuit that generates a bias current on the basis of the reference currents, wherein
a gate voltage corresponding to the bias current are applied to each of the gates of the P-channel transistor and the N-channel transistor, and
transfer gate outputs a signal at an input-terminal of the transfer gate from an output-terminal of the transfer gate in accordance with the gate voltage of each of the P-channel transistor and the N-channel transistor.
2. The oscillating apparatus according to claim 1 , wherein the reference current generation circuit generates the reference currents by summing the positive dependence current and the negative dependence current while changing their summation ratio in accordance with a temperature dependence regulation signal.
3. The oscillating apparatus according to claim 1 , wherein a value of the resistance of the third resistor changes in accordance with a temperature dependence regulation signal.
4. An oscillating apparatus comprising:
a band gap circuit including
a first PNP transistor having a base and a collector coupled to a reference potential node respectively,
a second PNP transistor having a base and a collector coupled to the reference potential node respectively, and
a first resistor coupled to an emitter of the second PNP transistor at one end, wherein
the band gap circuit generates a band gap voltage by controlling a potential at the other end of the first resistor so that it becomes equal to an emitter potential of the first PNP transistor;
a transfer gate including a P-channel transistor and a N-channel transistor;
a reference current generation circuit that generates reference currents by summing a positive dependence current and a negative dependence current, the reference current generation circuit includes
a positive dependence current generation circuit for generating a positive dependence current that has a positive dependence on absolute temperature, the positive dependence current generation circuit includes
a third PNP transistor having a collector and a base coupled to the reference potential node respectively,
a fourth PNP transistor having a collector and a base coupled to the reference potential node respectively,
a second resistor coupled to an emitter of the fourth PNP transistor at one end, and
a first control circuit for controlling a positive dependence current flowing through the second resistor in such a way that a potential of the other end of the second resistor becomes equal to an emitter potential of the third PNP transistor, and
a negative dependence current generation circuit for generating a negative dependence current that has a negative dependence on absolute temperature, the negative dependence current generation circuit includes
a third resistor coupled to the reference potential node at one end, and
a second control circuit for controlling a negative dependence current flowing through the third resistor in such a way that a potential of the other end of the third resistor becomes equal to the emitter potential of the third PNP transistor; and
a trimming current digital-to-analog conversion circuit that generates a bias current on the basis of the reference currents, wherein
a gate voltage corresponding to the bias current are applied to each of the gates of the P-channel transistor and the N-channel transistor, and
transfer gate outputs a signal at an input-terminal of the transfer gate from an output-terminal of the transfer gate in accordance with the gate voltage of each of the P-channel transistor and the N-channel transistor.
5. An oscillating apparatus comprising:
a band gap circuit including
a first PNP transistor having a base and a collector coupled to a reference potential node respectively,
a second PNP transistor having a base and a collector coupled to the reference potential node respectively, and
a first resistor coupled to an emitter of the second PNP transistor at one end, wherein
the band gap circuit generates a band gap voltage by controlling a potential at the other end of the first resistor so that it becomes equal to an emitter potential of the first PNP transistor;
a transfer gate including a P-channel transistor and a N-channel transistor;
a reference current generation circuit that generates reference currents by summing a positive dependence current and a negative dependence current, the reference current generation circuit includes
a positive dependence current generation circuit for generating a positive dependence current that has a positive dependence on absolute temperature, the positive dependence current generation circuit includes
a third PNP transistor having a collector and a base coupled to the reference potential node respectively,
a second resistor coupled to an emitter of the third PNP transistor at one end, and
a first control circuit for controlling a positive dependence current flowing through the second resistor in such a way that a potential of the other end of the second resistor becomes equal to the band gap voltage, and
a negative dependence current generation circuit for generating a negative dependence current that has a negative dependence on absolute temperature, the negative dependence current generation circuit includes
a third resistor coupled to the reference potential node at one end, and
a second control circuit for controlling a negative dependence current flowing through the third resistor in such a way that a potential of the other end of the third resistor becomes equal to an emitter potential of the third PNP transistor; and
a trimming current digital-to-analog conversion circuit that generates a bias current on the basis of the reference currents, wherein
a gate voltage corresponding to the bias current are applied to each of the gates of the P-channel transistor and the N-channel transistor, and
transfer gate outputs a signal at an input-terminal of the transfer gate from an output-terminal of the transfer gate in accordance with the gate voltage of each of the P-channel transistor and the N-channel transistor.
6. An oscillating apparatus comprising:
a band gap circuit including
a first PNP transistor having a base and a collector coupled to a reference potential node respectively,
a second PNP transistor having a base and a collector coupled to the reference potential node respectively, and
a first resistor coupled to an emitter of the second PNP transistor at one end, wherein
the band gap circuit generates a band gap voltage by controlling a potential at the other end of the first resistor so that it becomes equal to an emitter potential of the first PNP transistor;
a transfer gate including a P-channel transistor and a N-channel transistor;
a reference current generation circuit that generates reference currents by summing a positive dependence current and a negative dependence current, the reference current generation circuit includes
a positive dependence current generation circuit for generating a positive dependence current that has a positive dependence on absolute temperature, the positive dependence current generation circuit includes
a third PNP transistor having a collector and a base coupled to the reference potential node respectively,
a second resistor coupled to an emitter of the third PNP transistor at one end, and
a first control circuit for controlling a positive dependence current flowing through the second resistor in such a way that a potential of the other end of the second resistor becomes equal to the emitter potential of the first PNP transistor, and
a negative dependence current generation circuit for generating a negative dependence current that has a negative dependence on absolute temperature, the negative dependence current generation circuit includes
a third resistor coupled to the reference potential node at one end, and
a second control circuit for controlling a negative dependence current flowing through the third resistor in such a way that a potential of the other end of the third resistor becomes equal to the emitter potential of the first PNP transistor; and
a trimming current digital-to-analog conversion circuit that generates a bias current on the basis of the reference currents, wherein
a gate voltage corresponding to the bias current are applied to each of the gates of the P-channel transistor and the N-channel transistor, and
transfer gate outputs a signal at an input-terminal of the transfer gate from an output-terminal of the transfer gate in accordance with the gate voltage of each of the P-channel transistor and the N-channel transistor.