Linear voltage-controlled current source
View Patent ↗Embodiments of circuits, methods and systems for a voltage-controlled current source are disclosed. In some embodiments, the voltage-controlled current source may be a three-terminal device having separated gate structures. Other embodiments may also be described and claimed.
1. A circuit comprising a voltage-controlled current source that includes:
a channel;
a drain coupled with the channel;
a source coupled with the channel; and
a gate having:
a first gate structure adjacent to the channel;
a second gate structure adjacent to the channel and disposed with respect to the first gate structure to provide a gap region between the first gate structure and second gate structure; and
a terminal coupled with the first gate structure and the second gate structure and configured to receive a control voltage to control current flow between the source and the drain through the channel,
wherein the control voltage has a substantially linear relationship with the current flow.
2. The circuit of claim 1 , wherein the gate further comprises:
a first via to couple the first gate structure with the terminal; and
a second via to couple the second gate structure with the terminal.
3. The circuit of claim 1 , wherein the channel comprises an isolation implant channel.
4. The circuit of claim 1 , wherein the circuit further comprises a bias controller configured to bias a power amplifier based on the current.
5. The circuit of claim 4 , wherein the bias controller is configured to receive a voltage bias adjust signal as the control signal.
6. The circuit of claim 4 , further comprising:
a controller coupled with the bias controller and configured to provide the control signal based on operating characteristics of the power amplifier.
7. The circuit of claim 6 , wherein the operating characteristics include temperature, pinch-off voltage, or radio-frequency power.
8. The circuit of claim 1 , wherein the circuit comprises a field-effect transistor.
9. The circuit of claim 1 , wherein the circuit comprises a bipolar-high electron mobility transistor (BiHEMT) or a pseudomorphic high electron mobility transistor (pHEMT).