Semiconductor device and method for manufacturing thereof

1. A semiconductor device comprising:

a first semiconductor chip molded with a resin;

a plurality of first metals provided in the resin in a circumference of the first semiconductor chip, and being exposed on a lower surface of the resin;

a plurality of second metals provided in the resin over the plurality of first metals, and being exposed on an upper surface of the resin, wherein the plurality of first metals and the plurality of second metals are in spherical shapes;

a first wire coupling the first semiconductor chip to a first one of the pluralities of first metals and second metals; wherein the first wire is coupled to the first one of the pluralities of first metals and second metals so as to be sandwiched therebetween;

a second semiconductor chip provided directly on the first semiconductor chip, and molded with the resin; and

a second wire coupling the second semiconductor chip to a second one of the pluralities of first metals and second metals; wherein the second wire is coupled to the second one of the pluralities of first metals and second metals so as to be sandwiched therebetween.

2. The semiconductor device according to claim 1 further comprising a plurality of first semiconductor chips and a plurality of second semiconductor chips, wherein adjacent first semiconductor chips of the plurality of first semiconductor chips are coupled to each other with a plurality of respective first wires, and wherein adjacent second semiconductor chips of the plurality of second semiconductor chips are coupled to each other with a plurality of respective second wires.

3. The semiconductor device according to claim 2 further comprising a first conductor between adjacent first semiconductor chips and a second conductor between adjacent second semiconductor chips, the adjacent first semiconductor chips coupled to each other with the plurality of respective first wires via the first conductor, and the adjacent second semiconductor chips coupled to each other with the plurality of respective second wires via the second conductor.

4. The semiconductor device according to claim 1 , wherein the resin is an epoxy resin.

5. The semiconductor device according to claim 1 , wherein the pluralities of first metals and second metals each comprise copper plated with gold.

6. The semiconductor device according to claim 1 , wherein the first wire comprises gold.

7. The semiconductor device according to claim 1 further comprising a plurality of second semiconductor chips provided on a plurality of first semiconductor chips, wherein adjacent first semiconductor chips of the plurality of first semiconductor chips are coupled to each other with a plurality of respective first wires, and wherein adjacent second semiconductor chips of the plurality of second semiconductor chips are coupled to each other with a plurality of respective second wires.

8. The semiconductor device according to claim 7 further comprising a first conductor between adjacent first semiconductor chips and a second conductor between adjacent second semiconductor chips, the adjacent first semiconductor chips coupled to each other with the plurality of respective first wires via the first conductor and the adjacent second semiconductor chips coupled to each other with the plurality of respective second wires via the second conductor.

9. A semiconductor device comprising:

a first semiconductor chip molded with a first resin and a second semiconductor chip molded with a second resin;

a first metal provided in the first resin in a circumference of the first semiconductor chip, and being exposed on a lower surface of the first resin;

a second metal provided in the second resin in a circumference of the second semiconductor chip, and being exposed on a lower surface of the second resin;

a third metal provided in the first resin over the first metal, and being exposed on an upper surface of the first resin;

a fourth metal provided in the second resin over the second metal, and being exposed on an upper surface of the second resin, wherein the first metal, second metal, third metal, and fourth metal are in spherical shapes;

a first wire coupling the first semiconductor chip to the first metal and the third metal, wherein the first wire is coupled to the first metal and the third metal so as to be directly sandwiched therebetween; and

a second wire coupling the second semiconductor chip to the second metal and the fourth metal, wherein the second wire is coupled to the second metal and the fourth metal so as to be directly sandwiched therebetween, wherein the first semiconductor chip molded with the first resin and the second semiconductor chip molded with the second resin are in a stacked configuration with the second metal of the second semiconductor chip coupled to the third metal of the first semiconductor chip via a solder layer.

10. The semiconductor device according to claim 9 , further comprising:

a third semiconductor chip provided on the first semiconductor chip, and molded with the first resin; and

a third wire coupling the third semiconductor chip to the first metal and the third metal, wherein the third wire is coupled to the first metal and the third metal so as to be sandwiched therebetween.

11. The semiconductor device according to claim 9 , further comprising:

a fourth semiconductor chip provided on the second semiconductor chip, and molded with the second resin; and

a fourth wire coupling the fourth semiconductor chip to the second metal and the fourth metal, wherein the fourth wire is coupled to the second metal and the fourth metal so as to be sandwiched therebetween.