Complementary band-gap voltage reference circuit
View Patent ↗A complementary band-gap voltage reference circuit comprising first and second groups of transistors, each group containing a first transistor of npn type and a second transistor of pnp type and the transistors of different types in the same group having different emitter current conduction areas. The emitter-collector paths of the first transistors of each group are connected in parallel so as to present differential base-emitter voltages. The second transistors of each group are connected with their emitter-collector paths in parallel with a base-emitter junction of the first transistor of the same group so as to present differential base-emitter voltages of the second transistors across the first and second groups of transistors. The output regulated voltage is an additive function of the differential base-emitter voltages and of additive base-emitter voltages of transistors with smaller emitter current conduction area and different type.
1. A complementary band-gap voltage reference circuit comprising:
first and second groups of transistors, wherein
each group comprises at least one transistor of npn type and at least one transistor of pnp type and
the transistors of different types in the same group having different smaller or bigger emitter current conduction areas;
emitter-collector paths of a first transistor of each of said first and second groups being connected in parallel from a common connection so as to present differential base-emitter voltages across said first transistors, wherein
said first transistors having a same first type and different emitter current conduction areas;
a second transistor of each of said first and second groups being connected with its emitter-collector path in parallel with a base-emitter junction of said first transistor of the same group so as to present differential base-emitter voltages of said second transistors across said first and second groups of transistors, wherein
said second transistors having the same type and different emitter current conduction areas; and
output terminals connected to receive a regulated voltage which is an additive function of said differential base-emitter voltages and of additive base-emitter voltages of transistors with smaller emitter current conduction area and different type.
2. A complementary band-gap voltage reference circuit as claimed in claim 1 , wherein said transistors of additive base-emitter voltages are transistors of said first and second groups.
3. A complementary band-gap voltage reference circuit as claimed in claim 2 , wherein voltage is regulated at said output terminals, by coupling said output terminals to receive current from a supply through a driver responsive to a differential voltage across said first transistors.
4. A complementary band-gap voltage reference circuit as claimed in claim 1 , wherein said regulated voltage comprises:
an additive function of a voltage which is proportional to the base-emitter voltage of a transistor of said first group with smaller emitter current conduction area, a voltage which is proportional to the base-emitter voltage of a transistor of said second group with smaller emitter current conduction area, and of said differential base-emitter voltages.
5. A complementary band-gap voltage reference circuit as claimed in claim 4 , wherein voltage is regulated at said output terminals, by coupling said output terminals to receive current from a supply through a driver responsive to a differential voltage across said first transistors.
6. A complementary band-gap voltage reference circuit as claimed in claim 1 , wherein said transistors of additive base-emitter voltages comprise:
further transistors whose emitter-collector paths are connected in parallel with emitter-collector paths of said first and second groups.
7. A complementary band-gap voltage reference circuit as claimed in claim 6 , wherein said further transistors have smaller emitter current conduction areas.
8. A complementary band-gap voltage reference circuit as claimed in claim 7 , wherein
apart from base current compensation, said regulated voltage is arranged to be proportional to
V SBG =V RN1 +ΔVbe N +ΔVbe P ,
V RN1 is proportional to an additive function of said base-emitter voltages of said further transistors of said first and second groups with smaller emitter current conduction areas, and
ΔVbe N and ΔVbe P are proportional to said differential base-emitter voltages of said first transistors and of said second transistors of said first and second groups.
9. A complementary band-gap voltage reference circuit as claimed in claim 6 , wherein
apart from base current compensation, said regulated voltage is arranged to be proportional to
V SBG =V RN1 +ΔVbe N +ΔVbe P ,
V RN1 is proportional to an additive function of said base-emitter voltages of said further transistors of said first and second groups with smaller emitter current conduction areas, and
ΔAVbe N and ΔVbe P are proportional to said differential base-emitter voltages of said first transistors and of said second transistors of said first and second groups.
10. A complementary band-gap voltage reference circuit as claimed in claim 1 , wherein voltage is regulated at said output terminals, by coupling said output terminals to receive current from a supply through a driver responsive to a differential voltage across said first transistors.
11. A complementary band-gap voltage reference circuit as claimed in claim 1 , wherein said transistors are bipolar transistors.
12. A complementary band-gap voltage reference circuit as claimed in claim 1 , wherein base current compensation is obtained by including resistors in the base current paths of similar value but of opposite effect on said regulated voltage.
13. A complementary band-gap voltage reference circuit comprising:
first and second groups of transistors, wherein
each group comprises at least a first transistor of npn type and at least a second transistor of pnp type,
the transistors of different types in the same group having different smaller or bigger emitter current conduction areas,
emitter-collector paths of said second transistor of each of said first and second groups being connected in parallel from a common connection so as to present differential base-emitter voltages across said second transistors,
said second transistors having different emitter current conduction areas, and
said first transistor of each of said first and second groups being connected with its emitter-collector path in parallel with a base-emitter junction of said second transistor of the same group so as to present differential base-emitter voltages of said first transistors across said first and second groups of transistors,
said first transistors having different emitter current conduction areas, and
output terminals connected to receive a regulated voltage which is an additive function of said differential base-emitter voltages and of additive base-emitter voltages of transistors with smaller emitter current conduction area and different type.
14. A complementary band-gap voltage reference circuit as claimed in claim 13 , wherein said transistors of additive base-emitter voltages comprise transistors of said first and second groups.
15. A complementary band-gap voltage reference circuit as claimed in claim 13 , wherein said transistors of additive base-emitter voltages comprise further transistors whose emitter-collector paths are connected in parallel with emitter-collector paths of said first and second groups.
16. A complementary band-gap voltage reference circuit as claimed in claim 15 , wherein
apart from base current compensation, said regulated voltage is arranged to be proportional to
V SBG =V RN1 +ΔVbe N +ΔVbe P ,
V RN1 is proportional to an additive function of said base-emitter voltages of said further transistors of said first and second groups with smaller emitter current conduction areas, and
ΔVbe N and ΔVbe P are proportional to said differential base-emitter voltages of said first transistors and of said second transistors of said first and second groups.
17. A complementary band-gap voltage reference circuit as claimed in claim 15 , wherein said further transistors have smaller emitter current conduction areas.
18. A complementary band-gap voltage reference circuit as claimed in claim 17 , wherein
apart from base current compensation, said regulated voltage is arranged to be proportional to
V SBG V RN1 +ΔVbe N +ΔVbe P ,
V RN1 is proportional to an additive function of said base-emitter voltages of said further transistors of said first and second groups with smaller emitter current conduction areas, and
ΔVbe N and ΔVbe P are proportional to said differential base-emitter voltages of said first transistors and of said second transistors of said first and second groups.
19. A complementary band-gap voltage reference circuit as claimed in claim 13 , wherein base current compensation is obtained by including resistors in the base current paths of similar value but of opposite effect on said regulated voltage.
20. A complementary band-gap voltage reference circuit as claimed in claim 13 , wherein said transistors are bipolar transistors.