IP Library Granted Patent US 8,552,819
Granted Patent B2
US 8,552,819 · App. 13/282,371 · Granted Oct 8, 2013

High coupling, low loss saw filter and associated method

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Quick Facts
Patent No.
US 8,552,819
App. No.
13/282,371
Granted
Oct 8, 2013
Kind
B2
Abstract

Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.

Claims (25)

1. A surface acoustic wave (SAW) device comprising:

a substrate including lithium niobate (LiNbO3) and configured to provide a propagation of an acoustic wave;

one or more resonators formed by a plurality of electrodes on a surface of the substrate, wherein the plurality of electrodes have individual widths and are arranged with a plurality of different electrode periods with each of the plurality of different electrode periods being associated with a respective ratio of electrode width to electrode period; and

a dielectric overcoat disposed between and over the plurality of electrodes, wherein the ratio of the electrode width to the electrode period is provided by:

a/p=a_ref/p_ref+m*(p/p_ref−1);

where a is the electrode width, p is the electrode period, m is a slope value between approximately 0.4 and 1.0, p_ref is value between a smallest electrode period (p_min) of the SAW device and a largest electrode period (p_max) of the SAW device, and a_ref/p_ref is a value between a_max/p_max and a_min/p_min, where a_max is a largest electrode width of the SAW device and a_min is a smallest electrode width of the SAW device.

2. The SAW device of claim 1 , wherein m is approximately 0.5.

3. The SAW device of claim 1 , wherein the substrate has an electromechanical coupling factor that is greater than approximately five percent.

4. The SAW device of claim 1 , wherein the dielectric overcoat comprises silicon oxide (SiOx) and has a positive temperature coefficient of frequency (TCF) and a thickness, measured from a top surface of the plurality of electrodes to a top surface of the dielectric overcoat, that is greater than a thickness of the plurality of electrodes.

5. The SAW device of claim 4 , wherein the ratio of the electrode width to electrode period is further based on a ratio of the thickness of the dielectric overcoat to the thickness of the plurality of electrodes.

6. The SAW device of claim 4 , wherein the thickness of the dielectric overcoat is less than approximately three times the thickness of the plurality of electrodes.

7. The SAW device of claim 4 , wherein the thickness of the dielectric overcoat is within a range from about twenty percent of the electrode period to about eighty percent of the electrode period.

8. The SAW device of claim 1 , wherein the plurality of different electrode periods includes at least three different electrode periods with each associated with a respective ratio of electrode width to period.

9. The SAW device of claim 1 , wherein a mass of individual electrodes is primarily provided by copper included in the individual electrodes.

10. The SAW device of claim 1 , wherein an individual electrode has a thickness within a range from about ten to forty percent of a period associated with the individual electrode.

11. The SAW device of claim 1 , wherein the substrate is configured to provide a propagation of a non-leaky acoustic wave and has an orientation defined by Euler angles (λ±3 degrees, μ, θ±3 degrees), with angle μ=μ′−90 degrees, where μ′ is a Y rotation of the substrate and ranges from about 130 degrees to about 170 degrees.

12. The SAW device of claim 1 , wherein the ratios of electrode width to electrode periods are between approximately forty percent and sixty percent.

13. A surface acoustic wave (SAW) device comprising:

a substrate including lithium niobate (LiNbO3) and configured to provide a propagation of an acoustic wave;

a first resonator including a first plurality of electrodes having widths (a 1 ) and being arranged in a first pattern that includes a first electrode period (p 1 );

a second resonator including a second plurality of electrodes having widths (a 2 ) and arranged in a second pattern that includes a second electrode period (p 2 ), wherein p 1 <p 2 , and (p 1 −al)/p 1 >(p 2 −a 2 )/p 2 .

14. The SAW device of claim 13 , further comprising:

a dielectric overcoat disposed between and over the first and second plurality of electrodes and including silicon oxide (SiOx), a positive temperature coefficient of frequency (TCF), and a thickness, measured from a top surface of the first and second plurality of electrodes to a top surface of the dielectric overcoat, that is greater than a thickness of the first and second plurality of electrodes.

15. The SAW device of claim 14 , wherein the thickness of the dielectric overcoat is less than approximately three times the thickness of the first and second plurality of electrodes.

16. The SAW device of claim 14 , wherein the thickness of the dielectric overcoat is within a range from about twenty percent of a reference electrode period to about eighty percent of a reference electrode period, wherein the reference electrode period is based on the first period or the second period.

Assignments (2)
MERGER Recorded Jun 16, 2016
From: TRIQUINT SEMICONDUCTOR, INC.
To: QORVO US, INC.
Reel/Frame 039050/0193 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2011
From: ABBOTT, BENJAMIN P.; CHEN, ALAN; KOOK, TAEHO; STEINER, KURT; AIGNER, ROBERT; COMBS, SUZANNE; DANIEL, TIMOTHY; NAUMENKO, NATALYA F.; GRATIER, JULIEN
To: TRIQUINT SEMICONDUCTOR, INC.
Reel/Frame 027132/0434 →