Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer
View Patent ↗A method of manufacturing a magnetoresistive effect element includes forming a first electrode above a substrate, forming a metal layer of a metal material above the first electrode, forming a first magnetic layer above the metal layer, forming a tunnel insulating film above the first magnetic layer, forming a second magnetic layer above the tunnel insulating film, forming a second electrode layer above the second magnetic layer, patterning the second electrode layer, patterning the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer, while depositing sputtered particles of the metal film on side walls of the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer to form a sidewall metal layer, and oxidizing the sidewall metal layer to form an insulative sidewall metal oxide layer.
1. A method of manufacturing a magnetoresistive effect element comprising:
forming a first electrode above a substrate;
forming a metal layer of a metal material above the first electrode;
forming a first magnetic layer above the metal layer;
forming a tunnel insulating film above the first magnetic layer;
forming a second magnetic layer above the tunnel insulating film;
forming a second electrode layer above the second magnetic layer;
patterning the second electrode layer;
patterning the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer, while depositing sputtered particles of the metal layer on side walls of the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer to form a sidewall metal layer; and
oxidizing the sidewall metal layer to form an insulative sidewall metal oxide layer.
2. The method of manufacturing a magnetoresistive effect element according to claim 1 , wherein
in patterning the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer, the metal layer is etched selectively to the first electrode.
3. The method of manufacturing a magnetoresistive effect element according to claim 2 , wherein
in patterning the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer, CH 3 OH, HCOH, HCOOH or a mixed gas of CO and NH 3 is used as an etching gas.
4. The method of manufacturing a magnetoresistive effect element according to claim 1 , wherein
in oxidizing the sidewall metal layer, the sidewall metal layer is exposed to a plasma containing oxygen to oxidize the sidewall metal layer.
5. The method of manufacturing a magnetoresistive effect element according to claim 4 , wherein
in oxidizing the sidewall metal layer, the sidewall metal layer is exposed to the plasma of O 2 , CO 2 , or a gas of O 2 or CO 2 diluted with N 2 , Ar, CO or CO 2 to oxidize the sidewall metal layer.
6. The method of manufacturing a magnetoresistive effect element according to claim 4 , wherein
in oxidizing the sidewall metal layer, the sidewall metal layer is oxidized under a pressure of not more than 1 Torr.
7. The method of manufacturing a magnetoresistive effect element according to claim 1 , wherein
the metal material is aluminum, titanium, zirconium, vanadium, chrome or copper.
8. The method of manufacturing a magnetoresistive effect element according to claim 1 , wherein
the first electrode is formed of tantalum tungsten or hafnium.
9. The method of manufacturing a magnetoresistive effect element according to claim 1 ,
further comprising after forming the sidewall metal layer, cleaning with a chemical solution.