Etching method, method for manufacturing semiconductor device, and etching device
View Patent ↗An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.
1. An etching method comprising:
providing an etching bath;
providing a catalyst layer formed from a catalyst, the catalyst layer being provided on an upper inner-wall of the etching bath, a side inner-wall of the etching bath, and a bottom inner-wall of the etching bath;
applying a radiation to an etching aqueous solution which is filled in the etching bath; and
etching a material to be etched by using the etching aqueous solution irradiated with the radiation.
2. The etching method according to claim 1 , further comprising, generating an active species to functionalize the surface of the material to be etched with a hydroxyl group from the etching aqueous solution irradiated with the radiation.
3. The etching method according to claim 1 , further comprising, applying the radiation to the catalyst layer and the etching aqueous solution.
4. The etching method according to claim 3 , further comprising, applying the radiation to the etching aqueous solution through the catalyst layer formed from the catalyst.
5. The etching method according to claim 3 , wherein the catalyst includes titanium oxide or titanium oxide including at least one of antimony, chromium, and nickel.
6. The etching method according to claim 3 , wherein the catalyst includes strontium titanate or strontium titanate including at least one of antimony, chromium, and nickel.
7. The etching method according to claim 1 , further comprising, supplying the etching aqueous solution irradiated with the radiation to the material to be etched.
8. The etching method according to claim 7 , wherein the radiation is absorbed by the etching aqueous solution.
9. The etching method according to claim 1 , further comprising, applying the radiation to the etching aqueous solution and the material to be etched.
10. The etching method according to claim 1 , further comprising, disposing the material to be etched on a substrate, and forming a semiconductor device including the substrate.
11. The etching method according to claim 1 , further comprising,
reflecting the radiation from a radiation source to apply the reflected radiation to the etching aqueous solution.