METHODS FOR THE FABRICATION OF SEMICONDUCTOR DEVICES INCLUDING SUB-ISOLATION BURIED LAYERS
Methods for fabricating a semiconductor device are provided. In one embodiment, the method includes forming a Sub-Isolation Buried Layer (SIBL) stack over a semiconductor substrate. The SIBL stack includes a polish stop layer and a sacrificial implant block layer. The SIBL stack is patterned to create an opening therein, and the semiconductor substrate is etched through the opening to produce a trench in the semiconductor substrate. Ions are implanted into the semiconductor substrate at a predetermined energy level at which ion penetration through the patterned SIBL stack is substantially prevented to create a SIBL region beneath the trench. After ion implantation, a trench fill material is deposited over the SIBL stack and into the trench. The semiconductor device is polished to remove a portion of the trench fill material along with the sacrificial implant block layer and expose the polish stop layer.
1 . A method for fabricating a semiconductor device, the method comprising:
providing a semiconductor substrate including a region of a first conductivity type;
forming a Sub-Isolation Buried Layer (SIBL) stack over the semiconductor substrate, the SIBL stack comprising:
a polish stop layer overlaying the semiconductor substrate; and
a sacrificial implant block overlaying over the polish stop layer;
patterning the SIBL stack to create at least one opening therein;
etching the semiconductor substrate through the opening of the patterned SIBL stack to produce at least one trench in the semiconductor substrate;
implanting ions of a second conductivity type into the semiconductor substrate at a predetermined energy level at which penetration of the ions through the patterned SIBL stack is substantially prevented to create a SIBL region within the semiconductor substrate beneath the trench;
after implanting ions into the semiconductor substrate, depositing a trench fill material over the patterned SIBL stack and into the trench; and
polishing the semiconductor device to remove a portion of the trench fill material along with the sacrificial implant block layer and impart the semiconductor device with a substantially planar upper surface through which the polish stop layer is exposed.
2 . The method of claim 1 wherein polishing the semiconductor device comprises subjecting the partially-completed semiconductor device to a chemical mechanical planarization (CMP) process in the presence of a slurry having a chemistry preferentially removing the trench fill material and the sacrificial implant block layer over the polish stop layer during the CMP process.
3 . The method of claim 1 wherein forming a SIBL stack comprises depositing a nitride layer over the semiconductor substrate to produce the polish stop layer.
4 . The method of claim 1 wherein the polish stop layer is deposited to a thickness less than about 2000 angstroms.
5 . The method of claim 1 wherein the sacrificial implant block layer has a thickness sufficient to block at least 99.9% of ion penetration through the SIBL stack during implantation of the ions into semiconductor substrate at the predetermined energy level.
6 . The method of claim 1 wherein, during formation of the SIBL stack, the sacrificial implant block layer is imparted with a thickness between about 200 and about 2000 angstroms.
7 . The method of claim 1 wherein, during formation of the SIBL stack, the sacrificial implant block layer is formed by depositing an oxide layer over the polish stop layer.
8 . The method of claim 7 wherein forming a SIBL stack further comprises heat treating the sacrificial implant block layer after deposition thereof to densify the sacrificial implant block layer and decrease the rate at which the sacrificial implant block layer is removed during polishing.
9 . The method of claim 1 wherein the sacrificial implant block layer comprises an oxide deposited utilizing a tetraethylorthosilicate source.
10 . The method of claim 1 wherein formation of the sacrificial implant block layer comprises deposition of a high density plasma oxide.
11 . The method of claim 1 wherein the formation of the sacrificial implant block layer comprises depositing polysilicon.
12 . The method of claim 1 wherein depositing a trench fill material over the patterned SIBL stack and into the trench comprises blanket depositing a first oxide over the patterned SIBL stack and into the trench.
13 . The method of claim 1 wherein forming a SIBL stack over the semiconductor substrate comprises forming the SIBL stack to further include a pad oxide layer between the semiconductor substrate and the polish stop layer.
14 . The method of claim 1 further comprising, after polishing the partially-completed semiconductor device, exposing the semiconductor device to an etchant to remove the polish stop layer.
15 . The method of claim 1 wherein the semiconductor device is a bipolar transistor.
16 . The method of claim 1 wherein the semiconductor device is a varactor.
17 . A method for fabricating a semiconductor device, the method comprising:
forming a hardmask stack over a semiconductor substrate including an oxide layer, a nitride layer deposited over the oxide layer, and a sacrificial implant block layer deposited over the nitride layer;
patterning the hardmask stack to create a plurality of openings therein;
etching the semiconductor substrate through the plurality of openings in the patterned hardmask stack to produce a plurality of trenches in the semiconductor substrate;
implanting ions into the semiconductor substrate to create at least one doped region in the semiconductor substrate proximate the bottom of at least one of the plurality of trenches and self-aligned to at least one of the openings in the hardmask stack;
after implanting ions into the semiconductor substrate, depositing a dielectric material over the patterned hardmask stack and into the trenches; and
polishing the semiconductor device to remove a portion of the deposited dielectric material and the sacrificial implant block layer.
18 . The method of claim 17 wherein the sacrificial implant block layer comprises one of the group consisting of polysilicon and an oxide.
19 . The method of claim 17 wherein the sacrificial implant block layer comprises an oxide, and wherein the method further comprises heat treating the semiconductor device to densify the sacrificial implant block layer after deposition thereof.
20 . A method for fabricating a semiconductor device, the method comprising:
providing a semiconductor substrate;
forming a Sub-Isolation Buried Layer (SIBL) stack over the semiconductor substrate;
patterning the SIBL stack to create a plurality of openings therein;
etching the semiconductor substrate through the openings in the patterned SIBL stack to produce a plurality of trenches in the semiconductor substrate separating a plurality of device active areas; and
performing a SIBL implant to create SIBL regions in the semiconductor substrate self-aligned at least one of the openings in the patterned SIBL stack, the SIBL stack substantially inhibiting penetration of the ions into the plurality of device active areas