Transformer for monolithic microwave integrated circuits
Various embodiments may provide a monolithic transformer for a radio frequency (RF) power amplifier module, such as a microwave frequency power amplifier module. The transformer may include a plurality of pairs of edge-coupled transmission lines, with individual pairs including first and second edge-coupled transmission lines. The first transmission lines may include first ends coupled with one another and second ends coupled with an input terminal of the transformer. The second transmission lines may include first ends coupled with the input terminal and second ends coupled with an output terminal of the transformer. The transformer may pass a communication signal from the input terminal to the output terminal, and provide a first impedance at the input terminal and a second impedance at the output terminal. The second impedance may be higher than the first impedance (e.g., by a factor of four).
1. An apparatus comprising:
an input terminal configured to receive a communication signal and to have a first impedance;
an output terminal; and
a plurality of pairs of edge-coupled transmission lines, wherein the individual pairs of edge-coupled transmission lines include first and second transmission lines, and wherein:
the first transmission lines have first ends coupled with one another, and second ends coupled with the input terminal; and
the second transmission lines have first ends coupled with the input terminal and second ends coupled with the output terminal to pass the communication signal to the output terminal and to provide the output terminal with a second impedance that is different from the first impedance.
2. The apparatus of claim 1 , wherein the communication signal is provided to the input terminal by a power amplifier, and wherein the first ends of the first transmission lines are coupled to a bias pad to provide a direct current (DC) bias voltage for the power amplifier.
3. The apparatus of claim 2 , further comprising a bypass capacitor coupled between the bias pad and a ground potential.
4. The apparatus of claim 1 , wherein the plurality of pairs of edge-coupled transmission lines are co-planar in a plane, and wherein the plurality of pairs of edge-coupled transmission lines are folded in the plane.
5. The apparatus of claim 1 , further comprising one or more tuning capacitors coupled with the input terminal to facilitate a high-frequency response of the apparatus.
6. The apparatus of claim 1 , wherein the apparatus is included in a microwave monolithic integrated circuit (MMIC) on a die.
7. The apparatus of claim 1 , wherein a length of the transmission lines is determined based on a frequency range of the communication signal.
8. The apparatus of claim 1 , wherein a direct current (DC) current handling of the apparatus is based on a number of the pairs of edge-coupled transmission lines in the apparatus.
9. The apparatus of claim 1 , wherein the second impedance is higher than the first impedance.
10. The apparatus of claim 9 , wherein the second impedance is four-times higher than the first impedance.
11. A method comprising:
providing a die;
forming an input terminal on the die, the input terminal configured to receive a communication signal and to have a first impedance;
forming an output terminal on the die; and
forming a plurality of pairs of edge-coupled transmission lines in a plane on the die, wherein the plurality of pairs are oriented in parallel to one another, wherein the individual pairs of edge-coupled transmission lines include first and second transmission lines, and wherein:
the first transmission lines have first ends coupled with one another and second ends coupled with the input terminal; and
the second transmission lines have first ends coupled with the input terminal and second ends coupled with the output terminal to pass the communication signal to the output terminal and to provide the output terminal with a second impedance that is different from the first impedance.
12. The method of claim 11 , further comprising forming a power amplifier on the die, wherein the power amplifier is configured to provide the communication signal to the input terminal, and wherein the first ends of the first transmission lines are coupled to a bias pad to provide a direct current (DC) bias voltage for the power amplifier.
13. The method of claim 12 , further comprising forming a bypass capacitor on the die, the bypass capacitor coupled between the bias pad and a ground potential, and the bypass capacitor coupled with the ground potential by a plurality of vias in the die.
14. The method of claim 11 , wherein the plurality of pairs of edge-coupled transmission lines are folded in the plane.
15. The method of claim 11 , further comprising forming an airbridge or an underpass in another plane to couple the first ends of the first transmission lines with one another or the first ends of the second transmission lines with one another.
16. A microwave monolithic integrated circuit (MMIC) comprising:
a die;
a radio frequency (RF) amplifier disposed on the die and configured to generate a communication signal having a microwave frequency;
a transformer disposed on the die and including:
an input terminal configured to receive a communication signal and to have a first impedance;
an output terminal;
a plurality of pairs of edge-coupled transmission lines, the plurality of pairs oriented in parallel with one another, wherein the individual pairs of edge-coupled transmission lines include first and second transmission lines configured to pass the communication signal to the output terminal and to provide the output terminal with a second impedance that is greater than the first impedance; and
a bias pad coupled with the first ends of the first transmission lines and the RF amplifier to provide a direct current (DC) bias voltage to the RF amplifier.
17. The MMIC of claim 16 , wherein:
the first transmission lines include first ends coupled with one another and second ends coupled with the input terminal; and
the second transmission lines include first ends coupled with the input terminal and second ends coupled with the output terminal to pass the communication signal to the output terminal.
18. The MMIC of claim 16 , further comprising a bypass capacitor coupled between the bias pad and a ground potential.
19. The MMIC of claim 16 , wherein the plurality of pairs of edge-coupled transmission lines are co-planar in a plane, and wherein the plurality of pairs of edge-coupled transmission lines are folded in the plane.
20. The MMIC of claim 16 , further comprising one or more tuning capacitors coupled with the second ends of the first transmission lines and the first ends of the second transmission lines to facilitate a high-frequency response of the transformer.
21. The MMIC of claim 16 , wherein the RF amplifier is a distributed amplifier including a plurality of transistors, wherein the plurality of transistors are coupled with the bias pad to receive the DC bias voltage.
22. The MMIC of claim 16 , wherein a DC current handling of the transformer is based on a number of the pairs of edge-coupled transmission lines included in the transformer.