Vertical topology light emitting device
View Patent ↗A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad.
1. A light emitting device, comprising:
a support structure;
a first adhesion layer disposed on the support structure, the first adhesion layer comprising Au;
a second adhesion layer disposed on the first adhesion layer;
a first metal layer disposed on the second adhesion layer;
a second metal layer disposed on the first metal layer, the second metal layer comprising Ti;
a GaN-based semiconductor structure disposed on the second metal layer;
an interface layer disposed on the GaN-based semiconductor structure; and
a contact pad disposed on the interface layer,
wherein the second metal layer comprises a portion which directly contacts the GaN-based semiconductor structure.
2. The device according to claim 1 , wherein the support structure comprises Cu.
3. The device according to claim 1 , wherein the first adhesion layer directly contacts the second adhesion layer.
4. The device according to claim 1 , wherein the first adhesion layer is thicker than the second adhesion layer.
5. The device according to claim 1 , wherein the first metal layer directly contacts the second metal layer.
6. The device according to claim 1 , wherein the first metal layer is thicker than the second metal layer.
7. The device according to claim 1 , wherein the GaN-based semiconductor structure comprises an active layer having multiple quantum well structure, and wherein the active layer comprises AlInGaN.
8. The device according to claim 1 , wherein the GaN-based semiconductor structure comprises an etched n-type GaN.
9. The device according to claim 1 , wherein the GaN-based semiconductor structure is less than 5 microns thick.
10. The device according to claim 1 , wherein the interface layer comprises Ti.
11. The device according to claim 1 , wherein the interface layer comprises a first interface layer and a second interface layer.
12. The device according to claim 1 , wherein the contact pad has a diameter of about 100 microns.
13. The device according to claim 1 , further comprising a metal contact which contacts a p-type layer of the GaN-based semiconductor structure.
14. The device according to claim 1 , wherein the portion of the second metal layer directly contacts a p-type layer of the GaN-based semiconductor structure.
15. A light emitting device, comprising:
a support structure;
an adhesion structure disposed on the support structure;
a first metal layer disposed on the adhesion structure;
a second metal layer disposed on the first metal layer, the second metal layer comprising Ti; and
a GaN-based semiconductor structure disposed on the adhesion structure,
wherein the second metal layer comprises a portion which directly contacts the GaN-based semiconductor structure, and
wherein the second metal layer serves as an n-type electrode to the GaN-based semiconductor structure.
16. The device according to claim 15 , wherein the support structure comprises Cu.
17. The device according to claim 15 , wherein the adhesion structure comprises Au.
18. The device according to claim 15 , wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer.
19. The device according to claim 15 , wherein the first metal layer comprises Al.
20. The device according to claim 15 , further comprising a metal contact which contacts a p-type layer of the GaN-based semiconductor structure.