Semiconductor device and method of manufacturing semiconductor device
The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions.
1. A method of manufacturing a semiconductor device comprising:
forming a first impurity layer in a first region of a semiconductor substrate by implanting a first impurity of a first conductivity type in the first region;
forming a second impurity layer in a second region of the semiconductor substrate by implanting a second impurity of the first conductivity type in the second region, a diffusion constant of the second impurity being smaller than a diffusion constant of the first impurity;
forming a semiconductor layer above the semiconductor substrate after forming the second impurity layer;
forming a first gate insulating film above the semiconductor layer in the first region and the second region;
removing the first gate insulating film in the second region;
forming a second gate insulating film thinner than the first gate insulating film above the semiconductor layer in the second region; and
forming a first gate electrode above the first gate insulating film and a second gate electrode above the second gate insulating film, wherein
a concentration of the first impurity in the semiconductor layer of the first region is lower than a concentration of the first impurity in the first impurity layer, and
a concentration of the second impurity in the semiconductor layer of the second region is lower than a concentration of the second impurity in the second impurity layer.
2. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a first source/drain region of a second conductivity type in the semiconductor layer in the first region after forming the second gate insulating film, and
forming a second source/drain region of the first conductive type in the semiconductor layer in the second region after forming the second gate insulating film.
3. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a first device isolation insulating film and a second device isolation insulating film in the semiconductor substrate after forming the semiconductor layer, the first device isolation insulating film and the second device isolation insulating film being surrounding the first region and the second region respectively.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein
the first impurity is phosphorus, and
the second impurity is arsenic or antimony.
5. A method of manufacturing a semiconductor device comprising:
forming a first impurity layer in a first region of a semiconductor substrate by implanting a first impurity of a first conductivity type in the first region;
forming a second impurity layer in a second region of the semiconductor substrate by implanting the first impurity and a third impurity which suppresses a diffusion of the first impurity in the second region, a diffusion constant of the second impurity being smaller than a diffusion constant of the first impurity;
forming a semiconductor layer above the semiconductor substrate after forming the second impurity layer;
forming a first gate insulating film above the semiconductor layer in the first region and the second region;
removing the first gate insulating film in the second region;
forming a second gate insulating film thinner than the first gate insulating film above the semiconductor layer in the second region; and
forming a first gate electrode above the first gate insulating film and a second gate electrode above the second gate insulating film, wherein
a concentration of the first impurity in the semiconductor layer of the first region is lower than a concentration of the first impurity in the first impurity layer, and
a concentration of the first impurity in the semiconductor layer of the second region is lower than a concentration of the first impurity in the second impurity layer.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein
the first impurity is boron, and
the third impurity is carbon.
7. The method of manufacturing a semiconductor device according to claim 5 , wherein
forming the second impurity layer is at least performed by implanting germanium in the semiconductor substrate of the second region, implanting the first impurity in the semiconductor substrate of the second region after implanting germanium, and implanting the third impurity in the semiconductor substrate of the second region after implanting germanium.
8. The method of manufacturing a semiconductor device according to claim 5 , further comprising:
forming a first source/drain region of a second conductivity type in the semiconductor layer in the first region after forming the second gate insulating film, and
forming a second source/drain region of the first conductive type in the semiconductor layer in the second region after forming the second gate insulating film.
9. The method of manufacturing a semiconductor device according to claim 5 , further comprising:
forming a first device isolation insulating film and a second device isolation insulating film in the semiconductor substrate after forming the semiconductor layer, the first device isolation insulating film and the second device isolation insulating film being surrounding the first region and the second region respectively.