Methods, systems, and apparatuses for temperature compensated surface acoustic wave device

1. A temperature-compensated (TC) surface acoustic wave (SAW) device comprising:

a substrate;

a plurality of electrodes formed on first surface of the substrate;

an amorphous silicon layer formed over the plurality of electrodes, wherein individual electrodes of the plurality of electrodes include a copper layer with copper silicide sidewalls at an interface of the amorphous silicon layer and the copper layer; and

a temperature compensating layer formed over the amorphous silicon layer.

2. The TCSAW device of claim 1 , wherein the copper silicide sidewalls are to provide a barrier to electromigration of copper cations or a moisture barrier to suppress corrosion of copper.

3. The TCSAW device of claim 2 , wherein the copper silicide sidewalls are to provide a barrier to electromigration of capper cations and a moisture barrier to suppress corrosion of copper.

4. The TCSAW device of claim 1 , wherein the temperature compensating layer comprises SiO X , where X is approximately 2.

5. The TCSAW device of claim 1 , further comprising:

a cap layer formed over the temperature-compensating layer to inhibit moisture or trim frequency.

6. The TCSAW device of claim 5 , wherein the cap layer comprises Si Y N Z wherein Y is approximately 3 and Z is approximately 4.

7. The TCSAW device of claim 5 , wherein the cap layer is approximately 300 Å.

8. The TCSAW device of claim 1 , wherein the individual electrodes of the plurality of electrodes include a substrate-adhesion layer, a metal-dominant layer, and a dielectric-adhesion layer.

9. The TCSAW device claim 8 , wherein the substrate adhesion layer is a titanium layer and has a thickness of approximately 150 Å; the metal dominant layer has a thickness of approximately 2000 Å; and the dielectric-adhesion layer is an aluminum layer and has a thickness of approximately 300 Å.

10. The TCSAW device of claim 8 , wherein the metal-dominant layer is a copper-dominant layer or a molybdenum-dominant layer.

11. The TCSAW device of claim 1 , wherein the pyroelectric substrate is a lithium niobate substrate or a lithium tantalate substrate.

12. The TCSAW device of claim 1 , wherein the amorphous silicon layer is to electrically dissipate a charge produced by a pyroelectric effect of the substrate.

13. The TCSAW device of claim 1 , wherein the amorphous silicon layer is to at least reduce a possibility of an electrostatic discharge event with respect to the TCSAW device.

14. A method for forming an acoustic wave device comprising:

providing a substrate;

forming a plurality of electrodes on the substrate, wherein individual electrodes of the plurality of electrodes include a metal-dominant layer that is a copper-dominant layer;

forming an amorphous silicon layer over the plurality of electrodes; and

forming copper silicide sidewalls on the plurality of electrodes at an interface of the amorphous silicon layer and the copper layer.

15. The method of claim 14 , wherein said forming the amorphous silicon layer comprises:

exposing the plurality of electrodes to a silane plasma.

16. The method of claim 15 , wherein the method further comprises:

forming the copper silicide sidewalls on the plurality of electrodes by exposing the plurality of electrodes to the silane plasma.

17. The method of claim 16 , wherein said forming of the plurality of electrodes comprises:

exposing the plurality of electrodes to ammonia plasma to reduce oxide on sidewalls of the copper-dominant layer prior to said exposing the plurality of electrodes to the silane plasma.

18. A radio frequency front end having:

a power amplifier module including one or more power amplifiers to amplify a radio frequency signal;

an acoustic-wave filter coupled with the power amplifier module, the acoustic-wave filter to include a temperature-compensated (TC) surface acoustic wave (SAW) device having:

a substrate;

a plurality of electrodes formed on first surface of the substrate;

an amorphous silicon layer formed over the plurality of electrodes, wherein individual electrodes of the plurality of electrodes include a copper layer with copper silicide sidewalls at an interface of the amorphous silicon layer and the copper layer; and

a temperature compensating layer formed over the amorphous silicon layer.

19. A wireless communication device comprising:

a transceiver to generate outgoing signals; and

the radio frequency front end of claim 18 coupled with the transceiver.