Granted Patent B2

US 9,337,774 · App. 14/491,574 · Granted May 10, 2016

Inventors: Margaret A. Szymanowski (Austin, TX); L. M. Mahalingam (Austin, TX); Sarmad K. Musa (Austin, TX); Fernando A. Santos (Austin, TX); Jerry L. White (Austin, TX)

Assignee: FREESCALE SEMICONDUCTOR, INC.

H03F1/0205H01L21/565H01L23/645H01L23/66H01L25/0652H03F1/42H03F3/19H03F3/211H01L2223/6644H03F2200/36H03F2200/451

Abstract

Claims (73)

1. A packaged radio frequency (RF) amplifier device comprising:

a device substrate that includes a voltage reference plane;

a first input lead coupled to the device substrate;

a first output lead coupled to the device substrate;

a first transistor die coupled to a top surface of the device substrate with a solder bond;

a second die coupled to the top surface of the device substrate with a conductive epoxy that electrically couples at least one component of the second die to the voltage reference plane; and

non-conductive molding compound over the top surface of the device substrate and encompassing the first transistor die, the second die, a portion of the first input lead, and a portion of the first output lead.

2. The packaged RF amplifier device of claim 1 , wherein the first transistor die and the second die are coupled in series along a signal path of the device.

3. The packaged RF amplifier device of claim 1 , wherein the conductive epoxy has a current-carrying capability greater than 2.0 amps/square millimeter.

4. The packaged RF amplifier device of claim 1 , wherein the first transistor die includes a field effect transistor (FET) that includes:

a control terminal electrically coupled to the first input lead;

a first current carrying terminal electrically coupled to the first output lead and to the second die; and

a second current carrying terminal electrically coupled to the voltage reference plane of the device substrate through the solder bond.

5. The packaged RF amplifier device of claim 1 , wherein the second die comprises one or more components of an impedance matching circuit.

6. The packaged RF amplifier device of claim 5 , wherein the second die comprises an integrated passive device that includes a capacitor and a plurality of through substrate vias (TSVs), wherein a first electrode of the capacitor is electrically coupled to the first current carrying terminal of the FET and to the first output lead, and wherein a second electrode of the capacitor is electrically coupled to the voltage reference plane of the device substrate through the TSVs and the conductive epoxy.

7. The packaged RF amplifier device of claim 5 , wherein the impedance matching circuit is an input impedance matching circuit, and wherein the packaged RF amplifier further comprises:

first wirebonds coupled between the first input lead and a first terminal of the second die; and

second wirebonds coupled between the first input lead and the control terminal of the FET.

8. The packaged RF amplifier device of claim 5 , wherein the impedance matching circuit is an output impedance matching circuit, and wherein the packaged RF amplifier further comprises:

first wirebonds coupled between the first current carrying terminal of the FET and the first output lead; and

second wirebonds coupled between the first output lead and a first terminal of the second die.

9. The packaged RF amplifier device of claim 1 , further comprising:

a second input lead, wherein the first and second input leads are positioned at a first side of the device substrate;

a second output lead, wherein the first and second output leads are positioned at a second side of the device substrate;

a first isolation lead positioned between the first and second input leads;

a second isolation lead positioned between the first and second output leads;

a plurality of wirebonds coupled between the first and second isolation leads; and

wherein the first transistor die includes a first transistor coupled between the first input lead and the first output lead, a second transistor coupled between the second input lead and the second output lead, and a conductive structure positioned between the first and second transistors and between the first and second isolation leads, wherein the plurality of wirebonds are coupled to the conductive structure.

10. The packaged RF amplifier device of claim 1 , further comprising:

a second input lead, wherein the first and second input leads are positioned at a first side of the device substrate;

a second output lead, wherein the first and second output leads are positioned at a second side of the device substrate;

a second transistor die coupled to the top surface of the device substrate with a solder bond, wherein the first transistor die is positioned between the first input lead and the second input lead, and the second transistor die is positioned between the second input lead and the second output lead;

a first isolation lead positioned between the first and second input leads;

a second isolation lead positioned between the first and second output leads; and

a plurality of wirebonds coupled between the first and second isolation leads, and coupled to a portion of the device substrate between the first and second transistor die.

11. The packaged RF amplifier device of claim 1 , wherein the first transistor die comprises:

a first transistor having a first size, a first control terminal, a first current carrying terminal, and a second current carrying terminal, wherein the first control terminal is electrically coupled to the first input lead, and the first current carrying terminal is electrically coupled to the voltage reference plane of the device substrate through the solder bond; and

a second transistor having a second size that is greater than the first size, wherein the second transistor has a second control terminal, a third current carrying terminal, and a fourth current carrying terminal, wherein the second control terminal is electrically coupled to the second current carrying terminal of the first transistor, the third current carrying terminal is electrically coupled to the output lead, and the fourth current carrying terminal is electrically coupled to the voltage reference plane of the device substrate through the solder bond.

12. A method of manufacturing a packaged radio frequency (RF) amplifier device, the method comprising the steps of:

coupling a first transistor die to a top surface of a device substrate with a solder bond, wherein the device substrate includes a voltage reference plane;

coupling a second die to the top surface of the device substrate with a conductive epoxy that electrically couples at least one component of the second die to the voltage reference plane; and

disposing non-conductive molding compound over the top surface of the device substrate, wherein the non-conductive molding compound encompasses the first transistor die, the second die, a portion of a first input lead, and a portion of a first output lead.

13. The method of claim 12 , wherein the first transistor die includes a field effect transistor (FET) that includes a control terminal, a first current carrying terminal, and a second current carrying terminal, and wherein the method further comprises:

electrically coupling the control terminal to the first input lead;

electrically coupling the first current carrying terminal to the first output lead and to the second die; and

wherein the second current carrying terminal is electrically coupled to the voltage reference plane of the device substrate through the solder bond.

14. The method of claim 12 , wherein the second die comprises one or more components of an impedance matching circuit.

15. The method of claim 14 , wherein the second die comprises an integrated passive device that includes a capacitor and a plurality of through substrate vias (TSVs), and wherein the method further comprises:

electrically coupling a first electrode of the capacitor to the first current carrying terminal of the FET and to the first output lead; and

wherein a second electrode of the capacitor is electrically coupled to the voltage reference plane of the device substrate through the TSVs and the conductive epoxy.

16. The method of claim 14 , wherein the impedance matching circuit is an input impedance matching circuit, and wherein method further comprises:

coupling first wirebonds between the first input lead and a first terminal of the second die; and

coupling second wirebonds between the first input lead and the control terminal of the FET.

17. The method of claim 14 , wherein the impedance matching circuit is an output impedance matching circuit, and wherein the method further comprises:

coupling first wirebonds between the first current carrying terminal of the FET and the first output lead; and

coupling second wirebonds between the first output lead and a first terminal of the second die.

18. The method of claim 12 , further comprising the steps, before disposing the non-conductive molding compound, of:

positioning the first input lead and a second input lead at a first side of the device substrate;

positioning the first output lead and a second output lead at a second side of the device substrate;

positioning a first isolation lead between the first and second input leads;

positioning a second isolation lead between the first and second output leads; and

coupling a plurality of wirebonds between the first and second isolation leads and to a conductive structure positioned between first and second transistors of the first transistor die.

19. The method of claim 12 , further comprising the steps, before disposing the non-conductive molding compound, of:

coupling a second transistor die to the top surface of the device substrate with a solder bond;

a second input lead, wherein the first and second input leads are positioned at a first side of the device substrate;

positioning the first input lead and a second input lead at a first side of the device substrate;

positioning the first output lead and a second output lead at a second side of the device substrate, wherein the first transistor die is positioned between the first input lead and the second input lead, and the second transistor die is positioned between the second input lead and the second output lead;

positioning a first isolation lead between the first and second input leads;

positioning a second isolation lead between the first and second output leads; and

coupling a plurality of wirebonds between the first and second isolation leads, and coupled to a portion of the device substrate between the first and second transistor die.

20. The method of claim 12 , wherein the first transistor die comprises a first transistor and a second transistor, wherein the first transistor has a first size, a first control terminal, a first current carrying terminal, and a second current carrying terminal, and wherein the second transistor has a second size that is greater than the first size, a second control terminal, a third current carrying terminal, and a fourth current carrying terminal, and wherein the second control terminal is electrically coupled to the second current carrying terminal of the first transistor, and wherein the method further comprises the steps, before disposing the non-conductive molding compound, of:

electrically coupling the first control terminal to the first input lead, wherein the first current carrying terminal is electrically coupled to the voltage reference plane of the device substrate through the solder bond; and

electrically coupling the third current carrying terminal to the output lead, wherein the fourth current carrying terminal is electrically coupled to the voltage reference plane of the device substrate through the solder bond.

Assignments (15)

Continuity (1)