IP Library Granted Patent US 9,446,940
Granted Patent B2
US 9,446,940 · App. 14/506,037 · Granted Sep 20, 2016

Stress isolation for MEMS device

Inventors: Chad S. Dawson (Queen Creek, AZ); Stephen R. Hooper (Mesa, AZ)
Assignee: Freescale Semiconductor, Inc.
B81B7/0048B81C1/00325B81B7/007B81B2203/0118B81C1/00301
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Quick Facts
Patent No.
US 9,446,940
App. No.
14/506,037
Granted
Sep 20, 2016
Kind
B2
Abstract

A microelectromechanical systems (MEMS) die includes a substrate having a recess formed therein and a cantilevered platform structure. The cantilevered platform structure has a platform and an arm extending from the platform, wherein the platform and arm are suspended over the recess. The arm is fixed to the substrate and is a sole attachment point of the platform to the substrate. A MEMS device resides on the platform. Fabrication methodology entails forming the recess in the substrate, with the recess extending inwardly from a surface of the substrate, and attaching a structural layer over the recess and over the surface of the substrate. The MEMS device is formed on the structural layer and the structural layer is removed around a perimeter of the platform and the arm to form the cantilevered platform structure.

Claims (22)

1. A microelectromechanical systems (MEMS) die comprising:

a substrate having a recess formed therein;

a cantilevered platform structure having a platform and an arm extending from said platform, wherein said platform and said arm are suspended over said recess, and said arm is fixed to said substrate; and

a MEMS device residing on said platform;

a structural layer fixed to a surface of said substrate surrounding said recess, wherein said cantilevered platform structure extends from said structural layer to reside over said recess;

bond pads on said structural layer; and

conductive traces on said arm, said conductive traces electrically coupling said MEMS device with said bond pads.

2. The MEMS die of claim 1 wherein said recess is defined by a depth that is less than a thickness of said substrate.

3. The MEMS die of claim 1 wherein said recess exhibits a first area substantially parallel to a second area of said platform, said first area being greater than said second area so that said platform does not contact edges of said substrate surrounding said recess.

4. The MEMS die of claim 1 wherein said arm is a sole attachment point of said platform to said substrate.

5. The MEMS die of claim 1 wherein said arm is attached to said structural layer.

6. The MEMS die of claim 1 wherein said arm is a sole attachment point of said platform to said structural layer.

7. The MEMS die of claim 1 wherein said substrate exhibits a first thickness, and said structural layer exhibits a second thickness, said second thickness being less than said first thickness.

8. A microelectromechanical systems (MEMS) die comprising:

a substrate having a recess formed therein, said recess having a depth that is less than a thickness of said substrate;

a cantilevered platform structure having a platform and an arm extending from said platform, wherein said platform and said arm are suspended over said recess, said arm is fixed to said substrate, and said arm is a sole attachment point of said platform to said substrate; and

a MEMS device residing on said platform;

a structural layer fixed to a surface of said substrate surrounding said recess, wherein said cantilevered platform structure extends from said structural layer to reside over said recess;

bond pads on said structural layer; and

conductive traces on said arm, said conductive traces electrically coupling said MEMS device with said bond pads.

9. The MEMS die of claim 8 wherein said recess exhibits a first area substantially parallel to a second area of said platform, said first area being greater than said second area so that said platform does not contact edges of said substrate surrounding said recess.

10. The MEMS die of claim 8 wherein said arm is attached to said structural layer to form said sole attachment point of said platform to said structural layer.

Assignments (11)
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0241. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 5, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041260/0850 →
MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 5, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037444/0444 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 5, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037444/0535 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037358/0001 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035034/0019 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035033/0923 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Feb 18, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 035033/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2014
From: DAWSON, CHAD S.; HOOPER, STEPHEN R.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 033883/0530 →
Continuity (1)
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