Adjustable read time for memory
Apparatuses, systems, methods, and computer program products are disclosed for controlling a read time of an electronic memory device. A method includes reading data from an integrated circuit of storage using a read time for the integrated circuit of storage. A method includes adjusting a read time for an integrated circuit of storage. A method includes reading data from a same integrated circuit of storage using an adjusted read time for the integrated circuit of storage.
1. A method comprising:
reading data from an integrated circuit of storage using a read time for the integrated circuit of storage;
adjusting the read time for the integrated circuit of storage; and
reading data from the same integrated circuit of storage using the adjusted read time for the integrated circuit of storage.
2. The method of claim 1 , wherein the adjusted read time is longer than the read time.
3. The method of claim 2 , wherein the data read using the read time is transferred from a buffer of the integrated circuit of storage prior to completion of one or more stages of a read process such that the read time is shorter than the adjusted read time.
4. The method of claim 3 , further comprising setting a status bit of the integrated circuit of storage prior to completion of the one or more stages of the read process.
5. The method of claim 2 , wherein adjusting the read time is in response to an error rate for the integrated circuit of storage satisfying a threshold.
6. The method of claim 2 , wherein adjusting the read time is in response to a program/erase cycle count for the integrated circuit of storage satisfying a threshold.
7. The method of claim 1 , wherein adjusting the read time is in response to an indicator received by the integrated circuit of storage from a controller.
8. The method of claim 1 , wherein adjusting the read time comprises increasing a number of clock cycles allocated to at least one stage of a plurality of stages of a read process for the integrated circuit of storage.
9. The method of claim 1 , wherein adjusting the read time comprises storing a new read time parameter in the integrated circuit of storage and the new read time parameter is different than a default read time for the integrated circuit of storage.
10. An apparatus comprising:
a read module configured to read data from a memory chip; and
a read configuration module configured to change a read time of the memory chip such that the read module reads data from the memory chip using the changed read time, the change in the read time increasing an error rate for the memory chip.
11. The apparatus of claim 10 , further comprising an error correction module configured to use an error correction code (ECC) selected to compensate for the increase in the error rate for the memory chip in response to the change in the read time of the memory chip.
12. The apparatus of claim 10 , wherein the read configuration module is configured to change the read time of the memory chip based on an error correction code (ECC) capability of an error correction module for the memory chip.
13. The apparatus of claim 10 , wherein the read module is configured to initiate a transfer of data from an I/O buffer of the memory chip prior to completion of at least one stage of a read process of the memory chip for the transferred data.
14. The apparatus of claim 10 , wherein the read module is configured to initiate a transfer of data from an I/O buffer of the memory chip prior to a status register bit being set at the memory chip to indicate completion of a read process for the transferred data.
15. The apparatus of claim 10 , wherein the read configuration module is configured to change the read time by changing a time at which the memory chip sets a status register bit indicating that data of a read operation is available for transfer to a time prior to completion of at least one stage of a read process of the memory chip.
16. The apparatus of claim 10 , wherein the read configuration module is configured to change the read time in response to one or more of a program/erase cycle count for the memory chip satisfying a threshold and an error rate for the memory chip satisfying a threshold.
17. The apparatus of claim 10 , wherein the read configuration module is configured to change the read time for the memory chip by changing the read time for multiple die of the memory chip.
18. A system comprising:
at least one die comprising an array of memory elements;
a memory control manager for the at least one die, the memory control manager comprising a register that receives a setting for a read time for the array of memory elements of the at least one die from a controller for the at least one die.
19. The system of claim 18 , wherein the register comprises a status time register and the setting for the read time comprises an indicator of a time at which the memory control manager is to set a status bit to indicate completion of a read operation.
20. The system of claim 18 , wherein the register comprises a read time register and the setting for the read time comprises an indicator of an amount of time allocated to a read operation.