Gallium nitride on high thermal conductivity material device and method
Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a thermoconductive layer having a thermal conductivity of at least 500 W/(m·K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.
1. A semiconductor component comprising:
a barrier layer;
a gallium nitride (GaN) channel layer having a Ga-face coupled with the barrier layer; and
a thermoconductive layer within 1000 nanometers of the Ga-face of the GaN channel layer, wherein the thermoconductive layer has a thermal conductivity value of at least 500 W/(m·K) and is closer to an N-face of the GaN channel layer than to the Ga-face of the GaN channel layer.
2. The semiconductor component of claim 1 , further comprising:
a dielectric layer between the GaN channel layer and the thermoconductive layer.
3. The semiconductor component of claim 1 , further comprising:
a thermoconductive carrier mounting layer coupled with the thermoconductive layer, wherein the thermoconductive carrier mounting layer has a thermal conductivity value of at least 500 W/(m·K).
4. The semiconductor component of claim 1 , further comprising:
a GaN cap layer, wherein the GaN cap layer is coupled with the barrier layer.
5. The semiconductor component of claim 4 , further comprising:
a back barrier layer between the GaN channel layer and the thermoconductive layer.
6. The semiconductor component of claim 5 , further comprising a dielectric layer between the back barrier layer and the thermoconductive layer.
7. The semiconductor component of claim 6 , further comprising an activation layer coupled with a Ga-face of the GaN cap layer, the activation layer including a gate, a source, and a drain.
8. The semiconductor component of claim 7 , further comprising a thermoconductive carrier mounting layer coupled with the thermoconductive layer, wherein the thermoconductive carrier mounting layer has a thermal conductivity value of at least 500 W/(m·K).
9. The semiconductor component of claim 8 , wherein the thermoconductive layer and the thermoconductive carrier mounting layer are formed of a diamond based material.
10. The semiconductor component of claim 1 , wherein the thermoconductive layer is within 500 nanometers of the Ga-face of the GaN channel layer.
11. A method of fabricating a semiconductor component comprising:
forming an N-face barrier layer;
forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and
forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m·K).
12. The method of claim 11 , further comprising before forming the N-face barrier layer, forming an N-face GaN cap layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer.
13. The method of claim 12 , further comprising:
providing a substrate;
forming an N-face nucleation layer on the substrate before forming the N-face GaN cap layer;
forming an N-face buffer layer on the N-face nucleation layer, wherein the N-face GaN cap layer is formed above the N-face buffer layer; and
removing the substrate, N-face nucleation layer, and N-face buffer layer to expose a Ga-face of the N-face GaN cap layer.
14. The method of claim 12 , further comprising forming a dielectric layer on the N-face GaN channel layer, wherein forming the thermoconductive layer includes forming the thermoconductive layer on the dielectric layer.
15. The method of claim 12 , further comprising forming an activation layer on a Ga-face of the N-face GaN cap layer, the activation layer including a gate, a source, and a drain.
16. The method of claim 12 , wherein the thermoconductive layer is formed of diamond, boron nitride, graphene, graphite, or cubic boron arsenide.
17. The method of claim 13 , further comprising forming a release layer on the N-face buffer layer, wherein forming the N-face GaN cap layer above the N-face nucleation layer includes forming the N-face GaN cap layer on the release layer, and wherein removing the substrate, N-face nucleation layer, and N-face buffer layer includes etching the release layer.
18. The method of claim 13 , further comprising forming a dielectric layer above the N-face GaN channel layer, wherein forming the thermoconductive layer includes forming the thermoconductive layer on the dielectric layer.
19. The method of claim 13 , wherein the thermoconductive layer is formed of diamond, the N-face nucleation layer is formed of aluminum nitride (AlN), and the N-face buffer layer is formed of GaN.
20. The method of claim 17 , further comprising forming a back barrier layer on the N-face GaN channel layer.
21. The method of claim 20 , further comprising forming a dielectric layer on the back barrier layer, wherein forming the thermoconductive layer includes forming the thermoconductive layer on the dielectric layer.
22. The method of claim 21 , further comprising coupling a thermoconductive carrier mounting layer to the thermoconductive layer, wherein the thermoconductive carrier mounting layer has a thermal conductivity of at least 500 W/(m·K).
23. The method of claim 22 , further comprising forming an activation layer on the Ga-face of the N-face GaN cap layer, the activation layer including a gate, a source, and a drain.