Semiconductor device and method of forming WLP with semiconductor die embedded within penetrable encapsulant between TSV interposers
View Patent ↗A semiconductor device has a first substrate with a plurality of first conductive vias formed partially through the first substrate. A first semiconductor die is mounted over the first substrate and electrically connected to the first conductive vias. A plurality of bumps is formed over the first substrate. A second substrate has a plurality of second conductive vias formed partially through the second substrate. A penetrable encapsulant is deposited over the second substrate. The second substrate is mounted over the first substrate to embed the first semiconductor die and interconnect structure in the penetrable encapsulant. The encapsulant can be injected between the first and second substrates. A portion of the first substrate is removed to expose the first conductive vias. A portion of the second substrate is removed to expose the second conductive vias. A second semiconductor die is mounted over the second substrate.
1. A method of making a semiconductor device, comprising:
providing a first substrate having a plurality of first conductive vias formed partially through the first substrate;
mounting a first semiconductor die over the first substrate, the first semiconductor die including an active surface and electrically connected to the plurality of the first conductive vias;
depositing an underfill between the first semiconductor die and first substrate;
providing a second substrate having a plurality of second conductive vias formed partially through the second substrate;
disposing the second substrate over the first substrate and first semiconductor die;
forming an interconnect structure between the first substrate and second substrate;
disposing a penetrable encapsulant between the first substrate and second substrate by,
(a) disposing the penetrable encapsulant over a surface of the second substrate, and
(b) embedding the first semiconductor die and interconnect structure in the penetrable encapsulant by pressing the second substrate and the first substrate together;
removing a portion of the first substrate to expose the first conductive vias;
removing a portion of the second substrate to expose the second conductive vias; and
wire bonding the active surface of the first semiconductor die to at least one of the first conductive vias.
2. The method of claim 1 , wherein the interconnect structure includes one of a bump, a conductive pillar, and stacked bumps.
3. The method of claim 1 , further including forming a third conductive via through the first semiconductor die.
4. The method of claim 1 , further including disposing a second semiconductor die over the second substrate.
5. A method of making a semiconductor device, comprising:
providing a first substrate having a plurality of first conductive vias formed partially through the first substrate;
providing a second substrate having a plurality of second conductive vias formed partially through the second substrate;
mounting a first semiconductor die between the first substrate and second substrate, the first semiconductor die having an active surface electrically connected to the plurality of the first conductive vias;
disposing a second semiconductor die over both of the first substrate and the second substrate, wherein the second semiconductor die is electrically connected to the second conductive via;
disposing a penetrable encapsulant between the first substrate and second substrate by,
(a) disposing the penetrable encapsulant over a surface of the second substrate, and
(b) embedding the first semiconductor die and interconnect structure in the penetrable encapsulant by pressing the second substrate and the first substrate together;
removing a portion of the first substrate to expose the first conductive vias;
removing a portion of the second substrate to expose the second conductive vias; and
wire bonding the active surface of the first semiconductor die to at least one of the first conductive vias.
6. The method of claim 5 , further including forming an interconnect structure between the first substrate and second substrate.
7. The method of claim 6 , wherein the interconnect structure includes one of a bump, a conductive pillar, and stacked bumps.
8. The method of claim 5 , further including disposing a second semiconductor die between the first substrate and second substrate.
9. A method of making a semiconductor device, comprising:
providing a first substrate including a plurality of first conductive vias formed partially through the first substrate;
providing a second substrate including a plurality of second conductive vias formed partially through the second substrate;
disposing a first semiconductor die between the first substrate and second substrate and electrically connected to the plurality of the first conductive vias;
disposing a second semiconductor die over the first semiconductor die and between both of the first substrate and the second substrate, wherein the second semiconductor die is electrically connected to the second conductive vias;
forming an interconnect structure between the first substrate and second substrate;
disposing a penetrable encapsulant over a surface of the second substrate;
embedding the first semiconductor die and interconnect structure in the penetrable encapsulant by pressing the second substrate and the first substrate together;
removing a portion of the first substrate to expose the first conductive vias; and
removing a portion of the second substrate to expose the second conductive vias.
10. The method of claim 9 , wherein the interconnect structure includes one of a bump, a conductive pillar, and stacked bumps.
11. The method of claim 9 , further including disposing an underfill material between the first semiconductor die and the first substrate.
12. A semiconductor device, comprising:
a first substrate including a plurality of first conductive vias formed partially through the first substrate;
a second substrate including a plurality of second conductive vias formed partially through the second substrate;
a first semiconductor die disposed between the first substrate and the second substrate the first semiconductor die including an active surface and a back surface, wherein the active surface of the first semiconductor die is electrically connected with at least one of the first conductive vias;
a second semiconductor die having a back surface and mounted back surface-to-back surface with the first semiconductor die with a die attach adhesive formed between and wherein the second semiconductor die including an active surface and contact pads which are electrically connected to the active surface;
an interconnect structure formed between the first substrate and second substrate, wherein the first semiconductor die and the interconnect structure embed in penetrable encapsulant;
an underfill material disposed between the first semiconductor die and the first substrate;
a portion of the first substrate is removed to expose the first conductive vias; and
a portion of the second substrate is removed to expose the second conductive vias.
13. The semiconductor device of claim 12 , further including a third conductive via formed through the first semiconductor die.
14. The semiconductor device of claim 12 , further including an encapsulant disposed between the first substrate and second substrate.
15. The semiconductor device of claim 12 , wherein the interconnect structure includes one of a bump, a conductive pillar, and stacked bumps.