Semiconductor device and method for manufacturing same
Provided is a highly reliable semiconductor device and a method for manufacturing same. The method for manufacturing the semiconductor device includes forming an interlayer insulating film on a semiconductor substrate, forming a conductive plug in the interlayer insulating film, the conductive plug having a top surface for forming the same plane as the top surface of the interlayer insulating film, forming a first titanium film on the interlayer insulating film and the conductive plug, forming an aluminum diffusion-preventing film on the first titanium film, forming a second titanium film on the aluminum diffusion-preventing film, forming an aluminum film on the second titanium film, and shaping the area from the aluminum film to the first titanium film by etching to form wiring.
1. A method of manufacturing a semiconductor device, comprising:
forming an interlayer insulating film above a semiconductor substrate;
forming in the interlayer insulating film an electrically conductive plug, the upper surface of which forms the same plane as the upper surface of the interlayer insulating film such that the interlayer insulating film is planarized;
forming a first titanium film directly on the interlayer insulating film and directly on the electrically conductive plug;
forming an aluminum diffusion-preventing film on the first titanium film;
forming a second titanium film on the aluminum diffusion-preventing film;
forming an aluminum film on the second titanium film; and
forming a wiring line by employing etching to shape the aluminum film, the second titanium film, the aluminum diffusion-preventing film, and the first titanium film so that in a cross-section including a bottom surface of the first titanium film, the bottom surface of the first titanium film that contacts the electrically conductive plug only contacts the electrically conductive plug.
2. The method of claim 1 , comprising, before forming the wiring line, forming an aluminum alloy film by causing at least a portion of the second titanium film to react with a portion of the aluminum film.
3. The method of claim 2 , wherein forming the aluminum alloy film comprises forming the aluminum alloy film by heating the semiconductor substrate to 400° C. to 450° C.
4. The method of claim 2 , comprising, before forming the aluminum alloy film, forming a wiring line covering film above the aluminum film.
5. The method of claim 4 , wherein forming the wiring line comprises etching the films from the aluminum film to the first titanium film using the wiring line covering film as a mask.
6. The method of claim 5 , comprising, before forming the wiring line, forming an upper conductive film on the aluminum film, and forming a resist pattern on the wiring line covering film, wherein the wiring line covering film is formed on the upper conductive film, and forming the wiring line covering film comprises shaping a first covering film using the resist pattern as a mask.
7. The method of claim 1 , wherein the aluminum diffusion-preventing film is a titanium nitride film having a thickness at most equal to 15 nm.
8. The method of claim 1 , wherein the aluminum diffusion-preventing film is a titanium dioxide film having a thickness at most equal to 4 nm.
9. The method of claim 8 , wherein forming the aluminum diffusion-preventing film comprises forming the titanium dioxide film by air oxidation of the surface layer of the first titanium film.
10. The method of claim 8 , wherein forming the aluminum diffusion-preventing film comprises forming the titanium dioxide film by oxidizing the surface layer of the first titanium film by oxygen annealing.
11. The method of claim 1 , wherein the electrically conductive plug contains tungsten.
12. The method of claim 1 , wherein, before forming the electrically conductive plug, planarizing the upper surface of the interlayer insulating film.
13. The method of claim 1 , wherein forming the aluminum film comprises forming the aluminum film by sputtering while maintaining the semiconductor substrate at a temperature of 300° C. or less.
14. A semiconductor device comprising:
a semiconductor substrate;
an interlayer insulating film formed above the semiconductor substrate;
an electrically conductive plug which is formed in the interlayer insulating film, and the upper surface of which forms the same plane as the upper surface of the interlayer insulating film; and
on the interlayer insulating film, a wiring line which is electrically connected to the electrically conductive plug; wherein the wiring line comprises:
a titanium film in contact with the electrically conductive plug so that in a cross-section including a bottom surface of the titanium film, the bottom surface of the titanium film that contacts the electrically conductive plug only contacts the electrically conductive plug;
an aluminum diffusion-preventing film coplanar with the titanium film and formed on the titanium film;
an aluminum alloy film coplanar with the aluminum diffusion-preventing film and formed on the aluminum diffusion-preventing film; and
an aluminum film coplanar with the aluminum alloy film and formed on the aluminum alloy film.
15. The semiconductor device of claim 14 , wherein the aluminum diffusion-preventing film is a titanium nitride film having a thickness at most equal to 15 nm.
16. The semiconductor device of claim 14 , wherein the aluminum diffusion-preventing film is a titanium dioxide film having a thickness at most equal to 4 nm.
17. The semiconductor device of claim 14 , wherein the aluminum alloy film contains an alloy of aluminum and titanium.
18. The semiconductor device of claim 14 , wherein the electrically conductive plug contains tungsten.
19. The semiconductor device of claim 14 , wherein the wiring line additionally comprises a titanium nitride film on the aluminum film.
20. The semiconductor device of claim 14 , comprising a wiring line covering film on the wiring line.