Solid-state photodetector with a spectral response of the generated photocurrent is controlled by an applied bias voltage
View Patent ↗A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.
1. A photodetector, comprising:
a first photodiode that absorbs a first portion of incident light in a first depletion region, the first photodiode generating a photocurrent responsive to the absorbed first portion of incident light; and
a second photodiode that absorbs a second portion of the incident light in a second depletion region, the absorbed second portion comprises a portion of the incident light not including the first portion of the incident light,
wherein a spectral response of the photocurrent is controlled based at least in part on a first bias voltage applied between a first cathode contact coupled with a first cathode region of the first photodiode and a common anode contact coupled with a common anode region of the first photodiode and the second photodiode.
2. The photodetector of claim 1 , wherein a thickness of the first depletion region is controlled at least in part by the first bias voltage and a second bias voltage applied between the common anode contact and a second cathode contact coupled with a second cathode region of the second photodiode.
3. The photodetector of claim 1 , wherein the common anode contact comprises:
a first common anode contact coupled with the common anode region; and
a second common anode contact coupled with the common anode region,
wherein a resistance between the first common anode contact and the second common anode contact depends at least in part on a thickness of the common anode region.
4. The photodetector of claim 1 , further comprising:
a semiconductor substrate layer comprising the first depletion region; and
a transparent gate electrode in between a light reception portion of the photodetector that receives the incident light and the first depletion region,
wherein the transparent gate electrode is biased to form the first cathode region of the first photodiode between the first depletion region and the transparent gate electrode.