IP Library Granted Patent US 9,841,469
Granted Patent B2
US 9,841,469 · App. 15/006,911 · Granted Dec 12, 2017

Magnetic field sensor with multiple sense layer magnetization orientations

Inventors: Paige M. Holm (Phoenix, AZ); Lianjun Liu (Chandler, AZ)
Assignee: NXP USA, Inc.
G01R33/0005G01R17/10G01R33/0011G01R33/093G01R33/098
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Quick Facts
Patent No.
US 9,841,469
App. No.
15/006,911
Granted
Dec 12, 2017
Kind
B2
Abstract

A magnetic field sensor comprises a sensor bridge having multiple sensor legs. Each sensor leg includes magnetoresistive sense elements, each comprising a pinned layer having a reference magnetization parallel to a plane of the sensor and a sense layer having a sense magnetization. A permanent magnet layer spaced apart from the sense elements magnetically biases the sense magnetization into an out-of-plane direction that is non-perpendicular to the plane of the sensor. The sense magnetization of a portion of the sense elements is oriented in a first direction and the sense magnetization of a different portion of the sense elements is oriented in a second direction differing from the first direction to generate two unique bias field vectors of the sense layers which enables detection of the external magnetic field in a sensing direction that is perpendicular to the plane of the magnetic field sensor without inter-axis coupling of sensor response.

Claims (48)

1. A magnetic field sensor comprising:

a sensor bridge, said sensor bridge including a first sensor leg and a second sensor leg;

a first magnetoresistive sense element formed in said first leg and located in a plane of said magnetic field sensor, said first magnetoresistive sense element having a first pinned layer and a first sense layer;

a second magnetoresistive sense element formed in said second leg and located in said plane of said magnetic field sensor, said second magnetoresistive sense element having a second pinned layer and a second sense layer, said first and second magnetoresistive sense elements being sensitive to an external magnetic field along a sensing direction, wherein each of said first and second pinned layers has a reference magnetization oriented substantially parallel to said plane, and each of said first and second sense layers has a sense magnetization; and

a permanent magnet layer spaced apart from said first and second magnetoresistive sense elements, wherein in the absence of said external magnetic field, said permanent magnet layer magnetically biases said sense magnetization in an out-of-plane orientation relative to said plane, said sense magnetization of said first sense layer being oriented in a first direction and said sense magnetization of said second sense layer being oriented in second direction that differs from said first direction.

2. The magnetic field sensor of claim 1 wherein:

said sense magnetization of said first sense layer of said first magnetoresistive sense element is orientable from said first direction toward or away from said plane of said magnetic field sensor in response to said external magnetic field; and

said sense magnetization of said first sense layer of said first magnetoresistive sense element is orientable from said second direction toward or away from said plane of said magnetic field sensor in response to said external magnetic field.

3. The magnetic field sensor of claim 1 wherein in the absence of said external magnetic field, said out-of-plane orientation of said sense magnetization of each of said first and second sense layers is non-perpendicular to said plane of said magnetic field sensor.

4. The magnetic field sensor of claim 1 wherein each of said first and second directions of said sense magnetization of said first and second magnetoresistive sense elements is tilted below said plane of said magnetic field sensor by an equivalent angular magnitude.

5. The magnetic field sensor of claim 1 wherein said second direction is coplanar with said first direction in said out-of-plane orientation.

6. The magnetic field sensor of claim 1 wherein said external magnetic field is perpendicular to said plane of said magnetic field sensor, and inclusion of said permanent magnet layer enables detection of said external magnetic field in said sensing direction that is also perpendicular to said plane of said magnetic field sensor.

7. The magnetic field sensor of claim 1 wherein said permanent magnet layer is characterized by a single magnetic orientation.

8. The magnetic field sensor of claim 7 wherein said single magnetic orientation is substantially perpendicular to said magnetic field sensor.

9. The magnetic field sensor of claim 7 wherein said single magnetic orientation is substantially parallel to said magnetic field sensor.

10. The magnetic field sensor of claim 1 wherein:

each of said first and second magnetoresistive sense elements is characterized by a central axis, said central axis distinguishing a first side of said each of said first and second magnetoresistive sense elements from a second side of said each of said first and second magnetoresistive sense elements; and

said permanent magnet layer comprises a first magnet segment and a second magnet segment, said first magnet segment being positioned closer to said second side of said first magnetoresistive sense element than to said first side of said first magnetoresistive sense element to orient said first sense layer in said first direction, and said second magnet segment being positioned closer to said first side of said second magnetoresistive sense element than to said second side of said second magnetoresistive sense element to orient said second sense layer in said second direction.

11. The magnetic field sensor of claim 1 wherein said permanent magnet layer is a first permanent magnet layer and said magnetic field sensor further comprises a second permanent magnet layer vertically displaced away from said first permanent magnet layer, wherein said first and second magnetoresistive sense elements are interposed between said first and second permanent magnet layers, and said first and second permanent magnet layers function cooperatively to magnetically bias said sense magnetization of said first and second magnetoresistive sense elements in said out-of-plane orientation relative to said plane.

12. The magnetic field sensor of claim 1 wherein said reference magnetization of each of said first and second pinned layers is oriented in the same direction substantially parallel to said plane.

13. The magnetic field sensor of claim 1 wherein said sensor bridge further comprises:

a third sensor leg having a third magnetoresistive sense element formed therein, said third magnetoresistive sense element having a third pinned layer and a third sense layer; and

a fourth sensor leg having a fourth magnetoresistive sense element formed therein, said fourth magnetoresistive sense element having a fourth pinned layer and a fourth sense layer, wherein:

said first, second, third, and fourth sensor legs are coupled as a Wheatstone bridge such that said first and fourth magnetoresistive sense elements are coupled in series to form a first half of said Wheatstone bridge, said second and third magnetoresistive sense elements are coupled in series to form a second half of said Wheatstone bridge, said first half of said Wheatstone bridge is coupled in parallel with said second half of said Wheatstone bridge such that a first junction of said first and second magnetoresistive sense elements forms a first input terminal and a second junction of said third and fourth magnetoresistive sense elements forms a second input terminal;

said reference magnetization of each of said first, second, third, and fourth pinned layers of each of said first and third magnetoresistive sense elements is oriented in the same direction substantially parallel to said plane; and

said permanent magnet layer is spaced apart from said third and fourth magnetoresistive sense elements, said permanent magnet layer magnetically biasing said sense magnetization of said third sense layer in said first direction and magnetically biasing said sense magnetization of said fourth sense layer in said second direction.

14. A magnetic field sensor comprising:

a sensor bridge, said sensor bridge including a first sensor leg and a second sensor leg;

a first magnetoresistive sense element formed in said first leg and located in a plane of said magnetic field sensor, said first magnetoresistive sense element having a first pinned layer and a first sense layer;

a second magnetoresistive sense element formed in said second leg and located in said plane of said magnetic field sensor, said second magnetoresistive sense element having a second pinned layer and a second sense layer, said first and second magnetoresistive sense elements being sensitive to an external magnetic field along a sensing direction, wherein each of said first and second pinned layers has a reference magnetization oriented substantially parallel to said plane, and each of said first and second sense layers has a sense magnetization; and

a permanent magnet layer spaced apart from said first and second magnetoresistive sense elements, wherein in the absence of said external magnetic field, said permanent magnet layer magnetically biases said sense magnetization in an out-of-plane orientation relative to said plane, said out-of-plane orientation of each of said first and second sense layers is non-perpendicular to said plane of said magnetic field sensor, said sense magnetization of said first sense layer being oriented in a first direction and said sense magnetization of said second sense layer being oriented in second direction that differs from said first direction, and said second direction being coplanar with said first direction.

15. The magnetic field sensor of claim 14 wherein:

said sense magnetization of said first sense layer of said first magnetoresistive sense element is orientable from said first direction toward or away from said plane of said magnetic field sensor in response to said external magnetic field; and

said sense magnetization of said first sense layer of said first magnetoresistive sense element is orientable from said second direction toward or away from said plane of said magnetic field sensor in response to said external magnetic field.

16. The magnetic field sensor of claim 14 wherein each of said first and second directions of said sense magnetization of said first and second magnetoresistive sense elements is tilted below said plane of said magnetic field sensor by an equivalent angular magnitude.

17. The magnetic field sensor of claim 14 wherein said external magnetic field is perpendicular to said plane of said magnetic field sensor, and inclusion of said permanent magnet layer enables detection of said external magnetic field in said sensing direction that is also perpendicular to said plane of said magnetic field sensor.

18. A magnetic field sensor comprising:

a sensor bridge, said sensor bridge including a first sensor leg and a second sensor leg;

a first magnetoresistive sense element formed in said first leg and located in a plane of said magnetic field sensor, said first magnetoresistive sense element having a first pinned layer and a first sense layer;

a second magnetoresistive sense element formed in said second leg and located in said plane of said magnetic field sensor, said second magnetoresistive sense element having a second pinned layer and a second sense layer, said first and second magnetoresistive sense elements being sensitive to an external magnetic field along a sensing direction, wherein each of said first and second pinned layers has a reference magnetization oriented substantially parallel to said plane, and each of said first and second sense layers has a sense magnetization, said reference magnetization of each of said first and second pinned layers being oriented in the same direction substantially parallel to said plane; and

a permanent magnet layer spaced apart from said first and second magnetoresistive sense elements, wherein in the absence of said external magnetic field, said permanent magnet layer magnetically biases said sense magnetization in an out-of-plane orientation relative to said plane, said out-of-plane orientation of said sense magnetization of each of said first and second sense layers being non-perpendicular to said plane of said magnetic field sensor, said sense magnetization of said first sense layer being oriented in a first direction and said sense magnetization of said second sense layer being oriented in second direction that differs from said first direction.

19. The magnetic field sensor of claim 18 wherein each of said first and second directions of said sense magnetization of said first and second magnetoresistive sense elements is tilted below said plane of said magnetic field sensor by an equivalent angular magnitude.

20. The magnetic field sensor of claim 18 wherein said sensor bridge further comprises:

a third sensor leg having a third magnetoresistive sense element formed therein, said third magnetoresistive sense element having a third pinned layer and a third sense layer; and

a fourth sensor leg having a fourth magnetoresistive sense element formed therein, said fourth magnetoresistive sense element having a fourth pinned layer and a fourth sense layer, wherein:

said first, second, third, and fourth sensor legs are coupled as a Wheatstone bridge such that said first and fourth magnetoresistive sense elements are coupled in series to form a first half of said Wheatstone bridge, said second and third magnetoresistive sense elements are coupled in series to form a second half of said Wheatstone bridge, said first half of said Wheatstone bridge is coupled in parallel with said second half of said Wheatstone bridge such that a first junction of said first and second magnetoresistive sense elements forms a first input terminal and a second junction of said third and fourth magnetoresistive sense elements forms a second input terminal;

said reference magnetization of each of said first, second, third, and fourth pinned layers of each of said first and third magnetoresistive sense elements is oriented in the same direction substantially parallel to said plane; and

said permanent magnet layer is spaced apart from said third and fourth magnetoresistive sense elements, said permanent magnet layer magnetically biasing said sense magnetization of said third sense layer in said first direction and magnetically biasing said sense magnetization of said fourth sense layer in said second direction.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040626 FRAME: 0683. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME EFFECTIVE NOVEMBER 7, 2016. Recorded Jan 12, 2017
From: NXP SEMICONDUCTORS USA, INC. (MERGED INTO); FREESCALE SEMICONDUCTOR, INC. (UNDER)
To: NXP USA, INC.
Reel/Frame 041414/0883 →
CHANGE OF NAME Recorded Nov 16, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040626/0683 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 26, 2016
From: HOLM, PAIGE M.; LIU, LIANJUN
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037588/0954 →
Continuity (1)
Related Publication 20170212175A1 · Jul 27, 2017