Direct interface between SRAM and non-volatile memory providing space efficiency by matching pitch in both memories
A memory system comprises an SRAM array and a NVM array. The SRAM array and NVM array are both organized in rows and columns. The NVM array is directly coupled to the SRAM array. The memory system may also be coupled to a system bus of a data processing system. The number of columns of the NVM array is an integer multiple of the number of columns of the SRAM array, where the integer multiple is greater than one. Column logic is coupled to the SRAM array and to the NVM array. The column logic controls accesses to the SRAM and to the NVM array, and the column logic controls direct data transfers between the SRAM array and the NVM array.
1. A memory system comprising:
a static random access memory array, the static random access memory array organized in rows and columns, wherein a column comprises a first plurality of memory cells coupled to a first bit line and a row comprises a second plurality of memory cells;
a non-volatile memory array separate from the static random access memory array, the non-volatile memory array having a plurality of non-volatile memory cells organized in rows and columns, wherein a column of non-volatile memory cells comprises a third plurality of non-volatile memory cells coupled to a second bit line different than the first bit line and a row comprises a fourth plurality of non-volatile memory cells, and wherein the fourth plurality of non-volatile memory cells is an integer multiple of the second plurality of memory cells, wherein the integer multiple is greater than one; and
column logic coupled between the columns of the static random access memory array and the columns of the non-volatile memory array, the column logic for controlling read and write accesses to either one of only the static random access memory or to only the non-volatile memory array, and for controlling read and write data transfers directly between the static random access memory array and the non-volatile memory array.
2. The memory system of claim 1 , wherein the integer multiple is determined by a relative pitch between a layout of a static random access memory cell and a non-volatile memory cell.
3. The memory system of claim 1 , wherein the plurality of non-volatile memory cells is characterized as being a plurality of resistive non-volatile memory cells.
4. The memory system of claim 3 , wherein the plurality of resistive non-volatile memory cells is further characterized as being magnetic random access memory cells.
5. The memory system of claim 1 , wherein the memory system is a part of a data processing system having a processor and a system bus, wherein the data transfer is accomplished without involving the system bus.
6. The memory system of claim 1 , wherein during a data transfer between the static random access memory array and the non-volatile memory array, an integer multiple number of rows of the static random access memory array map to one row of the non-volatile memory array.
7. The memory system of claim 1 , wherein the memory system is a part of a data processing system having a processor and a system bus, wherein both the static random access memory and the non-volatile memory are read and write accessible from the system bus.
8. The memory system of claim 1 , wherein the memory system is a part of a data processing system having a processor and a system bus, wherein the processor is one of either a central processing unit or direct memory access unit, and wherein the data transfer is accomplished without involving the processor or the system bus.
9. The memory system of claim 1 , wherein the integer multiple is equal to 4.
10. A memory system, comprising:
a static random access memory array having a plurality of memory cells organized in rows and columns;
a resistive non-volatile memory array having a plurality of memory cells organized in rows and columns, wherein a number of columns of the resistive non-volatile memory array is an integer multiple of a number of columns of the static random access memory, the integer multiple being determined by a relative pitch between a layout of a static random access memory cell and a resistive non-volatile memory cell; and
column logic coupled to the static random access memory array and to the non-volatile memory array, the column logic for controlling accesses to the static random access memory and to the non-volatile memory array; and for controlling a data transfer between the static random access memory array and the non-volatile memory array.
11. The memory system of claim 10 , wherein the resistive non-volatile memory array comprises a plurality of one of either magnetic random access memory cells or resistive random access memory cells.
12. The memory system of claim 10 , wherein the memory system is part of a data processing system comprising a processor coupled to a system bus, the memory system coupled to the system bus, and wherein the data transfer occurs without involving the processor and the system bus.
13. The memory system of claim 10 , wherein the memory system is a part of a data processing system having a processor and a system bus, wherein both the static random access memory and the resistive non-volatile memory are read and write accessible from the system bus.
14. The memory system of claim 10 , wherein the static random access memory array and the resistive non-volatile memory array comprise a same number of memory cells.
15. The memory system of claim 10 , wherein the integer multiple is equal to 4.
16. A data processing system comprising:
a system bus;
a processor coupled to the system bus; and
a memory system, coupled to the system bus, the memory system comprising:
a static random access memory array having a plurality of memory cells organized in rows and columns;
a resistive non-volatile memory array having a plurality of memory cells organized in rows and columns, wherein a number of columns of the resistive non-volatile memory array is an integer multiple of a number of columns of the static random access memory, the integer multiple being determined by a relative pitch between a layout of a static random access memory cell and a resistive non-volatile memory cell; and
column logic coupled to the static random access memory array and to the non-volatile memory array, the column logic for controlling accesses to the static random access memory and to the non-volatile memory array; and for controlling a data transfer between the static random access memory array and the non-volatile memory array without involving the processor or the system bus.
17. The data processing system of claim 16 , wherein the static random access memory array comprises a plurality of six-transistor memory cells.
18. The data processing system of claim 16 , wherein the processor is one of either a central processing unit or direct memory access unit.
19. The data processing system of claim 16 , wherein the resistive non-volatile memory array is further characterized as being a magnetic random access memory array.
20. The data processing system of claim 16 , wherein both the static random access memory and the resistive non-volatile memory are read and write accessible from the system bus.