IP Library Granted Patent US 9,817,041
Granted Patent B2
US 9,817,041 · App. 15/027,272 · Granted Nov 14, 2017

Mm-wave frequency peak detector

Inventor: Yi Yin (Munich, DE)
Assignee: NXP USA, Inc.
G01R19/04G01R21/01
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Quick Facts
Patent No.
US 9,817,041
App. No.
15/027,272
Granted
Nov 14, 2017
Kind
B2
Abstract

A peak detector circuit comprises a first output coupled to ground by a first load and to emitter terminals of first and second switching devices. A second output is coupled to ground by a second load and to emitter terminals of third and fourth switching devices. A third output is coupled to a supply voltage node by a third load and to collector terminals of the first and second switching devices. A fourth output is coupled to the supply voltage node by a fourth load and to collector terminals of the third and fourth switching devices. The first, second, third, and fourth switching devices have control terminals which are biased with a common bias voltage. The first, second, third and fourth load are selected so that R1=R2=αf*R3=αf*R4, with R1, R2, R3, R4 being a resistance of the first, second, third and fourth loads, respectively, and αf a common-base current gain of the switching devices.

Claims (36)

1. A peak detector circuit comprising:

a first switching device having a collector terminal, an emitter terminal, and a control terminal;

a second switching device having a collector terminal, an emitter terminal, and a control terminal;

a third switching device having a collector terminal, an emitter terminal, and a control terminal;

a fourth switching device having a collector terminal, an emitter terminal, and a control terminal;

a first load having a first terminal and a second terminal, said first terminal of said first load being connected to a ground;

a second load having a first terminal and a second terminal, said first terminal of said second load being connected to a ground;

a third load having a first terminal and a second terminal, said first terminal of said third load being connected to a supply voltage node;

a fourth load having a first terminal and a second terminal, said first terminal of said fourth load being connected to said supply voltage node;

a first output coupled to said second terminal of said first load and coupled to both of said emitter terminals of said first and second switching devices;

a second output coupled to said second terminal of said second load and coupled to both of said emitter terminals of said third and fourth switching devices;

a third output coupled to said second terminal of said third load and coupled to both of said collector terminals of said first and second switching devices; and

a fourth output coupled to said second terminal of said fourth load, and coupled to both of said collector terminals of said third and fourth switching devices, where said control terminals of said first and second switching devices are arranged to receive a differential input voltage, whereby said control terminals of said first, second, third, and fourth switching devices are arranged to be biased with a common DC bias voltage, and whereby said first, second, third and fourth load are selected so that:

R 1= R 2=α f*R 3=α f*R 4, with

R1, R2, R3, R4 a resistance of said first, second, third and fourth load, respectively, and of a common-base current gain of said switching devices.

2. The peak detector circuit according to claim 1 , wherein a first pair of cascade transistors is arranged between said second terminal of said third load and said collector terminals of said first and second switching devices.

3. The peak detector circuit according to claim 1 , wherein a second pair of cascade transistors is arranged between said second terminal of said fourth load and said collectors terminals of said third and fourth switching devices.

4. The peak detector circuit according to claim 1 , wherein each of said firth, second, third, and fourth loads comprises a resistor and a capacitor, wherein said capacitor is arranged to bypass an AC signal and its harmonics to ground.

5. The peak detector circuit according to claim 1 , wherein each of said first, second, third and fourth output is coupled to said second terminal of each of said first, second, third and fourth load via a low pass filter.

6. The peak detector circuit according to claim 5 , wherein said low pass filter comprises a capacitor and a resistor.

7. The peak detector circuit according to claim 1 , wherein said first, second, third, and fourth switching devices comprise npn bipolar transistors.

8. The peak detector circuit according to claim 1 , wherein said first, second, third, and fourth switching devices comprise hetero-junction bipolar transistors.

9. The peak detector circuit according to claim 1 , wherein said first, second, third, and fourth switching devices comprise NMOS transistors.

10. The peak detector circuit according to claim 1 , wherein said first, second, third, and fourth switching devices comprise III-IV silicon devices, such as gallium arsenide (GaAs) devices.

11. The peak detector device comprising at least one peak detector circuit according to claim 1 , wherein said peak detector device comprises an interface bus, such as a serial peripheral bus or a parallel interface bus, arranged to measure voltages of said first, second, third and fourth outputs, and a signal processing block arranged to handle said measured voltages and calculate a sensor voltage Vsensor where:

V sensor=( v sig B−v ref B )−( v sig T−v ref T ),

where vsigB is a voltage of said first output, vrefB is a voltage of said second output, vrefT is a voltage of said third output, vsigT is a voltage of said fourth output.

12. The peak detector device according to claim 11 , wherein said peak detector device comprises a plurality of peak detector circuits, wherein said interface bus is arranged to sequentially or simultaneously measure voltages of said outputs of said plurality of peak detector circuits and wherein said signal processing block is arranged to process said measured voltages and calculate an average detector voltage Vdetector_av where:

V detector_ av =(( v sig B 1− v ref B 1)−( v sig T 1− v ref T 1)+ . . . +( v sig Bn−v ref Bn )−( v sig Tn−v ref Tn ))/ N

where vsigBn is a voltage of said first output of a n-th circuit, vrefBn is a voltage of said second output of a n-th circuit, vrefTn is a voltage of said third output of a n-th circuit, vsigTn is a voltage of said fourth output of a n-th circuit, with n=1, . . . , N, with N being an integer value larger than 1.

13. A transmitter device comprising the peak detector circuit according to claim 1 .

14. The transmitter device according to claim 13 , wherein the transmitter device is a millimeter wave (mm Wave) transmitter.

15. A receiver device comprising the peak detector circuit according to claim 1 .

16. The receiver device according to claim 15 , wherein the receiver device is a millimeter wave (mm Wave) receiver.

17. A transceiver device comprising the peak detector circuit according to claim 1 .

18. The transceiver device according to claim 17 , wherein the transceiver device is a millimeter wave (mm Wave) transceiver.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040626 FRAME: 0683. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME EFFECTIVE NOVEMBER 7, 2016. Recorded Jan 12, 2017
From: NXP SEMICONDUCTORS USA, INC. (MERGED INTO); FREESCALE SEMICONDUCTOR, INC. (UNDER)
To: NXP USA, INC.
Reel/Frame 041414/0883 →
CHANGE OF NAME Recorded Nov 16, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040626/0683 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2016
From: YIN, YI
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 038189/0882 →
Continuity (1)
Related Publication 20160238637A1 · Aug 18, 2016