Air gap in BAW top metal stack for reduced resistive and acoustic loss
Embodiments of a Bulk Acoustic Wave (BAW) device including a high conductivity electrode are disclosed. In some embodiments, a BAW device includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second electrode on a second surface of the piezoelectric layer opposite the first electrode. The second electrode includes a first metal layer and a second metal layer. The second metal layer is on the second surface of the piezoelectric layer, and the first metal layer is over a surface of the second metal layer opposite the piezoelectric layer, where the first metal layer is separated from the second metal layer by an air gap. By including the air gap, the thickness of the first metal layer (e.g., a high conductivity layer) can be increased to thereby increase the electrical conductivity of the second electrode while maintaining the performance of the BAW device.
1. A Bulk Acoustic Wave (BAW) device, comprising:
a piezoelectric layer;
a first electrode on a first surface of the piezoelectric layer; and
a second electrode on a second surface of the piezoelectric layer opposite the first electrode, the second electrode comprising a first metal layer and a second metal layer, wherein
the second metal layer is on the second surface of the piezoelectric layer; and
the first metal layer is over a surface of the second metal layer opposite the piezoelectric layer, the first metal layer being separated from the second metal layer by an air gap.
2. The BAW device of claim 1 wherein a thickness of the air gap separating the first metal layer from the second metal layer is in a range of and including 5 nanometers (nm) to 500 nm.
3. The BAW device of claim 1 wherein a thickness of the air gap separating the first metal layer from the second metal layer is in a range of and including 5 nanometers (nm) to 200 nm.
4. The BAW device of claim 1 wherein a thickness of the air gap separating the first metal layer from the second metal layer is in a range of and including 5 nanometers (nm) to 100 nm.
5. The BAW device of claim 1 wherein a thickness of the air gap separating the first metal layer from the second metal layer is in a range of and including 10 nanometers (nm) to 200 nm.
6. The BAW device of claim 1 wherein a thickness of the air gap separating the first metal layer from the second metal layer is in a range of and including 10 nanometers (nm) to 100 nm.
7. The BAW device of claim 1 wherein the first metal layer is a high electrical conductivity layer with resistivity <7×10 −8 Ohm·meter or conductivity >1.43×10 7 S/m.
8. The BAW device of claim 7 wherein a thickness of the first metal layer is greater than or equal to 50 nanometers (nm).
9. The BAW device of claim 7 wherein the first metal layer comprises one or more layers of a metal material, the metal material being one of a group consisting of: Aluminum, Copper, Gold, Silver, Molybdenum, and alloys thereof.
10. The BAW device of claim 7 wherein the first metal layer comprises two or more layers of two or more metal materials, the two or more metal materials comprising at least one of a group consisting of: Aluminum and Aluminum Copper.
11. The BAW device of claim 1 wherein the second metal layer is a high acoustic impedance layer having an acoustic impedance that is greater than 34 MRays.
12. The BAW device of claim 1 wherein the second metal layer is a low acoustic loss layer which has an acoustic loss that is less than that of Aluminum or Aluminum Copper.
13. The BAW device of claim 1 wherein the second metal layer comprises one or more layers of Tungsten.
14. The BAW device of claim 1 wherein the second metal layer comprises one or more layers of a metal material, the metal material being one of a group consisting of: Tantalum, Rhenium, Niobium, and Molybdenum.
15. The BAW device of claim 1 wherein the second metal layer comprises one or more layers of a metal material, the metal material being one of a group consisting of: Titanium, Zirconium, Hafnium, Vanadium, Chromium, Ruthenium, Osmium, Rhodium, and Iridium.
16. The BAW device of claim 1 wherein the second metal layer comprises two or more layers of two or more different materials, the two or more different materials comprising at least one of a group consisting of: Tantalum, Rhenium, Niobium, and Molybdenum.
17. The BAW device of claim 1 wherein the second metal layer comprises two or more layers of two or more different materials, the two or more different materials comprising at least one of a group consisting of: Titanium, Zirconium, Hafnium, Vanadium, Chromium, Ruthenium, Osmium, Rhodium, and Iridium.
18. The BAW device of claim 1 wherein the air gap separates the first metal layer from the second metal layer within an active region of the BAW device.
19. The BAW device of claim 1 wherein the air gap separates the first metal layer from the second metal layer over an active region of the BAW device.
20. The BAW device of claim 1 wherein the first metal layer is anchored, directly or indirectly, to the piezoelectric layer in an outer region of the BAW device.