Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof
View Patent ↗Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.
1. A Surface Acoustic Wave (SAW) device, comprising:
a quartz carrier substrate;
a piezoelectric layer on a surface of the quartz carrier substrate; and
at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate;
wherein a propagation direction of the at least one interdigitated transducer forms an angle less than 10 degrees with a z-axis or −z-axis of a quartz crystal of the quartz carrier substrate.
2. The SAW device of claim 1 wherein a thickness of the piezoelectric layer is less than four times a transducer electrode period of the at least one interdigitated transducer.
3. The SAW device of claim 1 wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer.
4. The SAW device of claim 1 wherein the SAW device comprises at least one SAW resonator.
5. The SAW device of claim 1 wherein the piezoelectric layer is formed of Lithium Tantalate with an orientation between Y and Y+60 degrees and a propagation along X.
6. The SAW device of claim 5 wherein a thickness of the piezoelectric layer is less than 60% of a transducer electrode period of the at least one interdigitated transducer.
7. The SAW device of claim 6 wherein a normal of the quartz carrier substrate is oriented along an x-axis or y-axis of the quartz crystal of the quartz carrier substrate.
8. The SAW device of claim 7 wherein the thickness of the piezoelectric layer is between 30% and 50% of the transducer electrode period of the at least one interdigitated transducer.
9. The SAW device of claim 6 wherein a normal of the quartz carrier substrate forms an angle between 30 and 55 degrees with an x-axis of the quartz crystal of the quartz carrier substrate.
10. The SAW device of claim 9 wherein the thickness of the piezoelectric layer is between 20% and 40% of the transducer electrode period of the at least one interdigitated transducer.
11. The SAW device of claim 1 wherein the piezoelectric layer is formed of Lithium Tantalate with an orientation between Y and Y+60 degrees.
12. The SAW device of claim 1 wherein the piezoelectric layer is formed of Lithium Niobate with an orientation between Y−20 degrees and Y+60 degrees.
13. The SAW device of claim 1 further comprising one or more additional layers on the surface of the quartz carrier substrate between the quartz carrier substrate and the piezoelectric layer.
14. The SAW device of claim 13 wherein the one or more additional layers comprise one or more dielectric layers.
15. The SAW device of claim 14 wherein the one or more dielectric layers comprise at least one layer of Silicon Oxide.
16. The SAW device of claim 1 wherein the at least one interdigitated transducer is embedded inside one or more dielectric layers.
17. The SAW device of claim 16 wherein the one or more dielectric layers comprise Silicon Oxide.
18. The SAW device of claim 1 further comprising one or more dielectric layers on a surface of the at least one interdigitated transducer opposite the piezoelectric layer.
19. The SAW device of claim 1 further comprising at least one layer of Silicon Oxide on the surface of the quartz carrier substrate between the quartz carrier substrate and the piezoelectric layer, wherein the at least one layer of Silicon Oxide is doped to reduce its thermal sensitivity.
20. The SAW device of claim 19 wherein the at least one layer of Silicon Oxide is doped with a dopant containing Fluoride or Boron atoms.
21. Filtering circuitry comprising:
a Surface Acoustic Wave (SAW) resonator comprising:
a quartz carrier substrate;
a piezoelectric layer on a surface of the quartz carrier substrate; and
at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate;
wherein a propagation direction of the at least one interdigitated transducer forms an angle less than 10 degrees with a z-axis or −z-axis of a quartz crystal of the quartz carrier substrate.
22. A method of fabricating a Surface Acoustic Wave (SAW) device, comprising:
providing a quartz carrier substrate;
providing a piezoelectric layer on a surface of the quartz carrier substrate; and
providing at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate;
wherein a propagation direction of the at least one interdigitated transducer forms an angle less than 10 degrees with a z-axis or −z-axis of a quartz crystal of the quartz carrier substrate.
23. A Surface Acoustic Wave (SAW) device, comprising:
a quartz carrier substrate;
a piezoelectric layer on a surface of the quartz carrier substrate; and
at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate;
wherein a crystallographic x-axis of the piezoelectric layer is aligned with a crystallographic z-axis of the quartz carrier substrate.
24. The SAW device of claim 23 wherein the piezoelectric layer is formed of Lithium Niobate or Lithium Tantalate.
25. The SAW device of claim 23 wherein a bulk cutoff frequency in the quartz carrier substrate is higher than a resonance frequency of the SAW device.