Two-dimensional self-aligned super via integration on self-aligned gate contact
Techniques relate to contacts for semiconductors. First gate contacts are formed on top of first gates, second gate contacts are on second gates, and terminal contacts are on silicide contacts. First gate contacts and terminal contacts are recessed to form a metal layer on top. Second gate contacts are recessed to be separately on each of the second gates. Filling material is formed on top of the recessed second gate contacts and metal layer. An upper layer is on top of the filling material. First metal vias are formed through filling and upper layers down to metal layer over first gate contacts. Second metal vias are formed through filling and upper layers down to metal layer over terminal contacts. Third metal vias are formed through filling and upper layers down to recessed second gate contacts over second gates. Third metal vias are taller than first.
1. A semiconductor device comprising:
first gate contacts on top of first gates, second gate contacts on top of second gates, and terminal contacts on top of trench silicide contacts, wherein the trench silicide contacts are individually formed on top of sources and drains;
a metal layer on top of the first gate contacts and the terminal contacts, wherein the second gate contacts are recessed such that recessed second gate contacts are separately on top of each of the second gates, wherein each of the recessed second gate contacts are separated from one another by a dielectric layer;
a filling material on top of the recessed second gate contacts and the metal layer, wherein an upper layer is on top of the filling material;
first metal vias formed on top of the metal layer over the first gate contacts, according to a first via pattern through the filling material and the upper layer down to the metal layer on top of the first gate contacts,
second metal vias formed on top of the metal layer over the terminal contacts, according to a second via pattern through the filling material and the upper layer down to the metal layer on top of the terminal contacts; and
third metal vias formed on top of the recessed second gate contacts over the second gates, according to a third via pattern through the filling material and the upper layer down to the recessed second gate contacts, the third metal vias being taller than the first metal vias.
2. The semiconductor device of claim 1 , wherein a height of the third metal vias corresponds to a thickness of the filling material.
3. The semiconductor device of claim 1 , wherein each of the second gates has side layers on sides of the second gates.
4. The semiconductor device of claim 3 , wherein the recessed second gate contacts are formed on top of the second gates along with the side layers.
5. The semiconductor device of claim 4 , wherein the side layers include nitride.
6. The semiconductor device of claim 1 , wherein the second gates are formed at individual gate locations.
7. The semiconductor device of claim 6 , wherein recessing the second gate contacts causes the recessed second gate contacts to have a lower height than the dielectric layer at the individual gate locations.
8. The semiconductor device of claim 1 , wherein each of third metal vias is formed on top of a separate one of the recessed second gate contacts over the second gates.
9. The semiconductor device of claim 1 , wherein a height of the third metal vias ranges from about 60-100 nanometers.
10. The semiconductor device of claim 1 , wherein a height of the first metal vias ranges from about 10-40 nanometers.