Semiconductor device and method of making embedded wafer level chip scale packages
A semiconductor device includes a carrier and a plurality of semiconductor die disposed over the carrier. An encapsulant is deposited over the semiconductor die. A composite layer is formed over the encapsulant to form a panel. The carrier is removed. A conductive layer is formed over the panel. An insulating layer is formed over the conductive layer. The carrier includes a glass layer, a second composite layer formed over the glass layer, and an interface layer formed over the glass layer. The composite layer and encapsulant are selected to tune a coefficient of thermal expansion of the panel. The panel includes panel blocks comprising an opening separating the panel blocks. The encapsulant or insulating material is deposited in the opening. A plurality of support members are disposed around the panel blocks. An interconnect structure is formed over the conductive layer.
1. A method of making a semiconductor device, comprising:
providing a plurality of semiconductor die;
depositing an encapsulant over the plurality of semiconductor die to form a panel of semiconductor die;
disposing a first support layer including a composite material comprising multiple layers of glass and fiber over the panel of semiconductor die;
forming an interconnect structure over the panel of semiconductor die opposite the first support layer; and
singulating the panel of semiconductor die to separate the plurality of semiconductor die.
2. The method of claim 1 , wherein the first support layer extends along a side surface of the panel of semiconductor die.
3. The method of claim 1 , further including:
providing a carrier; and
disposing the plurality of semiconductor die over the carrier.
4. The method of claim 1 , further including removing a portion of the first support layer.
5. The method of claim 1 , further including removing a portion of the encapsulant.
6. The method of claim 1 , further including disposing a second support layer around the panel of semiconductor die.
7. A method of making a semiconductor device, comprising:
providing a plurality of semiconductor die;
depositing an insulating layer over the plurality of semiconductor die to form a panel of semiconductor die;
forming a first support layer including a composite material comprising multiple layers of glass and fiber over the panel of semiconductor die; and
forming an interconnect structure over the panel of semiconductor die opposite the first support layer.
8. The method of claim 7 , further including singulating the panel of semiconductor die to separate the plurality of semiconductor die.
9. The method of claim 7 , wherein the first support layer extends along a side surface of the panel of semiconductor die.
10. The method of claim 7 , further including:
providing a carrier; and
disposing the plurality of semiconductor die over the carrier.
11. The method of claim 7 , further including removing a portion of the first support layer.
12. The method of claim 7 , further including removing a portion of the encapsulant.
13. The method of claim 7 , further including disposing a second support layer around the panel of semiconductor die.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
disposing a first support layer including a composite material comprising multiple layers of glass and fiber over and around the encapsulant; and
forming an interconnect structure over the semiconductor die opposite the first support layer.
15. The method of claim 14 , wherein the first support layer extends along a side surface of the semiconductor die.
16. The method of claim 14 , further including a carrier, wherein the semiconductor die is disposed over the carrier.
17. The method of claim 14 , further including a second support layer disposed around the semiconductor die.
18. The method of claim 16 , wherein the carrier includes multiple layers of glass and fiber and/or metal film.
19. The method of claim 14 , wherein the composite material includes a prepreg.
20. A method of making a semiconductor device, comprising:
providing a plurality of semiconductor die;
forming an insulating layer over the plurality of semiconductor die to form a panel of semiconductor die; and
disposing a first support layer including a composite material comprising multiple layers of glass and fiber over and around the panel of semiconductor die.
21. The method of claim 20 , further including forming an interconnect structure over the panel of semiconductor die opposite the first support layer.
22. The method of claim 20 , wherein the first support layer extends along a side surface of the panel of semiconductor die.
23. The method of claim 20 , further including disposing the semiconductor die over a carrier.
24. The method of claim 20 , further including disposing a second support layer around the panel of semiconductor die.
25. The method of claim 20 , wherein the first support layer includes a prepreg.