Semiconductor device and method of forming build-up interconnect structures over a temporary substrate
A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first interconnect structure over the substrate;
disposing a first semiconductor die over the first interconnect structure;
disposing the substrate over a carrier with the first semiconductor die oriented away from the carrier;
depositing an encapsulant over the carrier, substrate, and first semiconductor die;
forming a second interconnect structure over the encapsulant and semiconductor die; and
removing the substrate to expose the first interconnect structure after forming the second interconnect structure.
2. The method of claim 1 , further including forming a conductive column over the first interconnect structure.
3. The method of claim 2 , wherein the conductive column extends from the first interconnect structure to the second interconnect structure.
4. The method of claim 1 , further including forming a shielding layer within the first interconnect structure or second interconnect structure.
5. The method of claim 1 , further including forming a conductive pillar over the first semiconductor die.
6. The method of claim 1 , further including disposing a second semiconductor die over the first interconnect structure.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first interconnect structure over the substrate;
disposing a semiconductor die over the first interconnect structure;
singulating the substrate and first interconnect structure after disposing the semiconductor die over the first interconnect structure;
disposing the substrate over a carrier after singulating the substrate and first interconnect structure;
depositing an encapsulant over the semiconductor die, the substrate, and a side surface of the first interconnect structure while the substrate is over the carrier;
forming a second interconnect structure over the encapsulant and semiconductor die with the semiconductor die between the first interconnect structure and second interconnect structure; and
removing the substrate and carrier to expose the first interconnect structure after forming the second interconnect structure over the semiconductor die.
8. The method of claim 7 , further including forming a vertical interconnect structure over the first interconnect structure.
9. The method of claim 7 , wherein forming the first interconnect structure includes:
forming an insulating layer over the substrate; and
forming a conductive layer over the insulating layer.
10. The method of claim 9 , further including removing a portion of the insulating layer after removing the substrate.
11. The method of claim 7 , further including disposing the substrate in contact with a carrier.
12. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first interconnect structure over the substrate;
disposing a first semiconductor die over the first interconnect structure;
disposing the substrate over a carrier with the substrate oriented toward the carrier;
depositing an encapsulant over the first semiconductor die and substrate, wherein the encapsulant extends over a side surface of the substrate;
forming a second interconnect structure over the encapsulant; and
removing the substrate and carrier to expose the first interconnect structure.
13. The method of claim 12 , further including removing the substrate after forming the second interconnect structure.
14. The method of claim 12 , wherein the substrate includes silicon.
15. The method of claim 12 , further including forming a vertical interconnect structure over the first interconnect structure.
16. The method of claim 12 , wherein forming the first interconnect structure includes:
forming an insulating layer over the substrate; and
forming a conductive layer over the insulating layer.
17. The method of claim 16 , further including removing a portion of the insulating layer after removing the substrate.
18. The method of claim 12 , further including disposing a second semiconductor die over the first interconnect structure.
19. A semiconductor device, comprising:
a carrier;
a substrate disposed over the carrier;
a first interconnect structure formed over the substrate;
a first semiconductor die disposed over the first interconnect structure;
an encapsulant disposed over the carrier, substrate, first interconnect structure, and first semiconductor die, wherein the encapsulant covers a side surface of the first interconnect structure; and
a second interconnect structure formed over the encapsulant with the first semiconductor die disposed between the first interconnect structure and second interconnect structure, wherein the second interconnect structure is formed directly on a top surface of the encapsulant and contacts a contact pad of the first semiconductor die.
20. The semiconductor device of claim 19 , further including a second semiconductor die disposed over the first interconnect structure.
21. The semiconductor device of claim 19 , wherein the substrate includes glass.
22. The semiconductor device of claim 19 , further including a vertical interconnect structure formed through the encapsulant between the first interconnect structure and second interconnect structure, wherein the second interconnect structure contacts the vertical interconnect structure.